Applied Materials had 12 patents in big data during Q4 2023. The patents filed by Applied Materials Inc in Q4 2023 focus on innovative technologies for three-dimensional NAND flash memory structures, including solid channel cores of epitaxial silicon grown directly from a silicon substrate. Additionally, methods for depositing transition metal dichalcogenide films on substrates and converting transition metal oxide films are described. Another patent involves a method for analyzing reflection data from a film on a substrate using machine-learning models to determine process result metrics for display on a graphical user interface or processing in a script-based environment. GlobalData’s report on Applied Materials gives a 360-degreee view of the company including its patenting strategy. Buy the report here.

Applied Materials grant share with big data as a theme is 41% in Q4 2023. Grant share is based on the ratio of number of grants to total number of patents.

Recent Patents

Application: Epitaxial silicon channel growth (Patent ID: US20230413569A1)

The patent filed by Applied Materials Inc. describes a three-dimensional NAND flash memory structure that includes solid channel cores of epitaxial silicon grown directly from a silicon substrate. The structure consists of alternating oxide-nitride material layers formed as a stack, with a channel hole etched through these layers down to the silicon substrate. A tunneling layer surrounds the channel hole, contacting the material layers, and an epitaxial silicon core grows from the substrate up through the channel holes. Support structures may be included in channel holes or slits of the memory array to provide physical support during the growth of the epitaxial silicon cores.

The claims detail the specific components and methods involved in fabricating the 3D NAND memory structure, such as the use of single-crystal silicon for the substrate, alternating layers of oxide and nitride materials, and the growth of epitaxial silicon cores. The method involves etching channel holes, forming tunneling layers, and epitaxially growing the silicon cores. Support structures, including metals and gap-fill materials, are utilized to provide additional stability to the memory array. The memory array itself consists of multiple channel holes with support structures, tunneling layers, and epitaxial silicon cores that connect to the silicon substrate. An epitaxial silicon layer further connects the silicon substrate to the alternating material layers, ensuring the integrity and functionality of the 3D NAND memory array.

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GlobalData Patent Analytics tracks bibliographic data, legal events data, point in time patent ownerships, and backward and forward citations from global patenting offices. Textual analysis and official patent classifications are used to group patents into key thematic areas and link them to specific companies across the world’s largest industries.