Sanken Electric has been granted a patent for a semiconductor device with multiple semiconductor regions and trenches. The device includes gate electrodes, insulating films, and an upper electrode. It also features a fourth semiconductor region and an edge trench. The patent highlights the arrangement and electrical connections of these components, as well as the impurity concentration and depth of the semiconductor regions. GlobalData’s report on Sanken Electric gives a 360-degree view of the company including its patenting strategy. Buy the report here.
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According to GlobalData’s company profile on Sanken Electric, Quantum dot devices was a key innovation area identified from patents. Sanken Electric's grant share as of September 2023 was 39%. Grant share is based on the ratio of number of grants to total number of patents.
A semiconductor device with trench structure and multiple regions
A recently granted patent (Publication Number: US11777027B2) describes a semiconductor device with several unique features. The device includes a first semiconductor region of a first conductivity type, a second semiconductor region of a second conductivity type on top of the first region, and a third semiconductor region of the first conductivity type on the second region. Trenches are formed through the second region, reaching the first region, and each trench contains a gate electrode and an insulating film to separate the electrode from the first and second regions. An upper electrode is electrically connected to the second and third semiconductor regions.
One notable aspect of the device is the presence of a fourth semiconductor region of the second conductivity type arranged on the outer side of a trench that contains the outermost gate electrode. This fourth region is electrically connected to the upper electrode and has a bottom that is deeper than the bottom of the second semiconductor region. Additionally, an edge trench is positioned on the outer side of the fourth semiconductor region, and a fifth semiconductor region of the second conductivity type is located on the outer side of the edge trench. The bottom of the fifth semiconductor region is arranged deeper than the bottom of the second semiconductor region.
The patent also describes the inclusion of a first field electrode inside each trench, positioned below the gate electrode and electrically connected to the upper electrode. The edge trench, which surrounds the other trenches in a plan view, contains a field electrode and an insulating film to separate the electrode from the first and second semiconductor regions.
Another embodiment of the semiconductor device includes a seventh semiconductor region of the first conductivity type, which has a lower impurity concentration than the first semiconductor region. This seventh region is arranged between the trench containing the outermost gate electrode and the edge trench.
Overall, this patent presents a semiconductor device with unique arrangements of semiconductor regions, trenches, and electrodes. These features contribute to the device's functionality and performance in various applications.
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GlobalData Patent Analytics tracks bibliographic data, legal events data, point in time patent ownerships, and backward and forward citations from global patenting offices. Textual analysis and official patent classifications are used to group patents into key thematic areas and link them to specific companies across the world’s largest industries.
