Semtech has been granted a patent for a TVS circuit that includes multiple diodes and a silicon controlled rectifier. The circuit is designed to suppress transient voltage spikes and protect electronic devices. The diodes are arranged in a specific configuration to provide effective voltage suppression. The circuit can be implemented on multiple semiconductor dies or on a single die. GlobalData’s report on Semtech gives a 360-degree view of the company including its patenting strategy. Buy the report here.

According to GlobalData’s company profile on Semtech, Adaptive video coding was a key innovation area identified from patents. Semtech's grant share as of September 2023 was 53%. Grant share is based on the ratio of number of grants to total number of patents.

Transient voltage suppression (tvs) circuit with multiple diodes

Source: United States Patent and Trademark Office (USPTO). Credit: Semtech Corp

A recently granted patent (Publication Number: US11776951B2) describes a transient voltage suppression (TVS) circuit that provides protection against voltage spikes. The circuit includes several components such as diodes and a silicon controlled rectifier (SCR) to suppress transient voltages.

The TVS circuit consists of a first diode connected to a first terminal, a silicon controlled rectifier connected to a second and third node, a second diode connected to a first node and a second node, a third diode connected to a first node and a third node, a fourth diode connected to a second node and a second terminal, and a fifth diode connected to the second terminal and the third node. These components work together to provide the desired transient voltage suppression.

In some embodiments, the first diode is located within a high voltage portion of the TVS circuit, while the silicon controlled rectifier is located within a low voltage portion. This arrangement allows for efficient voltage suppression across different voltage ranges.

The patent also describes different configurations for the placement of the components. In one embodiment, the first diode and the silicon controlled rectifier are located on a common semiconductor die. In another embodiment, the first diode is on a first semiconductor die, while the silicon controlled rectifier is on a second semiconductor die.

The silicon controlled rectifier in the TVS circuit includes two transistors. The first transistor has a conduction terminal connected to the second node, while the second transistor has a conduction terminal connected to the control terminal of the first transistor, a control terminal connected to the second conduction terminal of the first transistor, and a second conduction terminal connected to the third node.

The patent also describes a method of manufacturing the TVS circuit. The method involves providing the various diodes and the silicon controlled rectifier in the desired configuration.

Overall, this granted patent presents a TVS circuit design that effectively suppresses transient voltages and provides protection against voltage spikes. The circuit's configuration and component placement allow for efficient voltage suppression across different voltage ranges. The method of manufacturing the circuit provides a practical approach for producing the TVS circuit.

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GlobalData Patent Analytics tracks bibliographic data, legal events data, point in time patent ownerships, and backward and forward citations from global patenting offices. Textual analysis and official patent classifications are used to group patents into key thematic areas and link them to specific companies across the world’s largest industries.