Axcelis Technologies has filed a patent for an ion implantation system that includes a mass analyzing magnet, two ion sources, a magnet current source, magnet control circuitry, shields, and beamline components. The system is designed to selectively control the polarity of the magnet current based on the formation of the ion beams and prevent line-of-sight between the ion sources. The mass analyzing magnet analyzes the ion beams and directs the mass analyzed ion beam towards a workpiece. GlobalData’s report on Axcelis Technologies gives a 360-degree view of the company including its patenting strategy. Buy the report here.
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According to GlobalData’s company profile on Axcelis Technologies, 3D memory devices was a key innovation area identified from patents. Axcelis Technologies's grant share as of September 2023 was 53%. Grant share is based on the ratio of number of grants to total number of patents.
Ion implantation system with mass analyzing magnet and beamline components
A recently filed patent (Publication Number: US20230307210A1) describes an ion implantation system that includes a mass analyzing magnet, first and second ion sources, a magnet current source, magnet control circuitry, shields, and beamline components. The mass analyzing magnet has a yoke and a coil that define entrances and an exit, and it can mass analyze ion beams from the first and second ion sources. The magnet control circuitry selectively controls the polarity of the magnet current to control the formation of the ion beams. Shields are positioned within the mass analyzing magnet to prevent a line-of-sight between the first and second ion sources. The system also includes beamline components downstream of the mass analyzing magnet to direct the mass analyzed ion beam towards a workpiece.
The patent also describes the specific configuration of the shields. The shields include a central shield positioned within the interior region of the mass analyzing magnet between the entrances, as well as entrance shields positioned along the first and second beam paths. External magnet shields are positioned in the exterior region of the mass analyzing magnet and extend perpendicular to the mass analyzed beam path. These shields prevent transmission of x-ray radiation between the ion sources. The mass analyzing magnet is a dipole magnet with flat, indexed, or curved poles that deflect the ion beams by a predetermined angle.
The patent further includes a method for maintaining the ion implantation system. The method involves applying a polarity of magnet current to the mass analyzing magnet, providing shields within the magnet, applying a source current to the first ion source to form and direct a first ion beam, mass analyzing the first ion beam, halting the source current, reversing the polarity of the magnet current, applying a source current to the second ion source to form and direct a second ion beam, mass analyzing the second ion beam, and performing maintenance on the first ion source while preventing a line-of-sight between the ion sources using the shields.
Overall, this patent describes an ion implantation system with a mass analyzing magnet, shields, and beamline components that can efficiently analyze and direct ion beams for various applications. The specific configuration of the shields prevents x-ray radiation and ensures accurate analysis and direction of the ion beams. The method for maintaining the system allows for maintenance activities while preventing interference between the ion sources.
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GlobalData Patent Analytics tracks bibliographic data, legal events data, point in time patent ownerships, and backward and forward citations from global patenting offices. Textual analysis and official patent classifications are used to group patents into key thematic areas and link them to specific companies across the world’s largest industries.
