Sino-American Silicon Products has patented a method for producing a three-dimensional structure and vertical transistor wafer with reduced Si emission during heat treatment. By forming a shape on a silicon substrate with specific oxygen concentration and heat treatment, the structure aims to improve interface smoothness. GlobalData’s report on Sino-American Silicon Products gives a 360-degree view of the company including its patenting strategy. Buy the report here.

According to GlobalData’s company profile on Sino-American Silicon Products, Artificial photosynthesis was a key innovation area identified from patents. Sino-American Silicon Products's grant share as of January 2024 was 46%. Grant share is based on the ratio of number of grants to total number of patents.

Method for producing three-dimensional silicon structure with oxide film

Source: United States Patent and Trademark Office (USPTO). Credit: Sino-American Silicon Products Inc

The granted patent (Publication Number: US11887845B2) discloses a method for producing a three-dimensional structure on a silicon substrate. The method involves processing the surface layer of the silicon substrate to form a three-dimensional shape with specific oxygen concentration levels and then subjecting it to a heat treatment to create an oxide film on the surface, resulting in the formation of the three-dimensional structure. The height of the structure ranges between 1 nm and 100 nm, with projections and recesses in the thickness direction. The heat treatment temperature is maintained between 800° C. to 900° C.

Furthermore, the patent also describes the production of a vertical transistor using the three-dimensional structure produced according to the method outlined in the claims. The three-dimensional structure serves as the foundation for producing transistors, with specific dimensions specified for the length and width in directions perpendicular to the thickness direction. The method emphasizes the use of a monocrystalline silicon substrate and the formation of the three-dimensional shape through etching processes. This innovative method opens up possibilities for creating precise and controlled three-dimensional structures for various applications, particularly in the field of semiconductor technology.

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GlobalData Patent Analytics tracks bibliographic data, legal events data, point in time patent ownerships, and backward and forward citations from global patenting offices. Textual analysis and official patent classifications are used to group patents into key thematic areas and link them to specific companies across the world’s largest industries.