Aixtron has patented a method for depositing a nucleation layer on a group IV substrate using group III and V elements. By introducing specific gaseous materials at high temperatures, they achieve a low dopant concentration and reduced damping in the crystal structure, enabling the development of a two-dimensional electron gas. GlobalData’s report on Aixtron gives a 360-degree view of the company including its patenting strategy. Buy the report here.

According to GlobalData’s company profile on Aixtron, 3D memory devices was a key innovation area identified from patents. Aixtron's grant share as of January 2024 was 39%. Grant share is based on the ratio of number of grants to total number of patents.

Method for depositing nucleation layer on substrate with doping effect

Source: United States Patent and Trademark Office (USPTO). Credit: Aixtron SE

A recently granted patent (Publication Number: US11887848B2) discloses a method for depositing a nucleation layer on a substrate made of a group IV element. The method involves introducing gaseous starting materials containing group III and V elements into a process chamber at temperatures above 500°C. A buffer layer and an active layer are then deposited on the nucleation layer to create a two-dimensional electron gas. By controlling the partial pressure and mass flow of the gaseous starting materials, a dopant concentration between 1×10^17 and 1×10^18 cm-3 is achieved, along with a decrease in high-frequency damping.

Furthermore, the patent details the deposition process under specific conditions, such as a process temperature range of 800°C to 1,200°C and a molar ratio of the gaseous starting materials. The substrate, typically silicon or germanium, is treated with specific gaseous starting materials containing silicon or germanium. The method also focuses on doping the nucleation layer with the group IV element and controlling the dopant concentration to not exceed 1×10^18 cm-3. The resulting layer sequence includes a buffer layer, an active layer, and a two-dimensional electron gas at the boundary surface between them, showcasing the innovative approach outlined in the patent.

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GlobalData Patent Analytics tracks bibliographic data, legal events data, point in time patent ownerships, and backward and forward citations from global patenting offices. Textual analysis and official patent classifications are used to group patents into key thematic areas and link them to specific companies across the world’s largest industries.