ASM International has been granted a patent for a method of depositing transition metal nitride-containing material on a substrate for semiconductor device manufacturing. The process involves a cyclic deposition method using specific precursors to form transition metal nitride layers. GlobalData’s report on ASM International gives a 360-degree view of the company including its patenting strategy. Buy the report here.
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According to GlobalData’s company profile on ASM International, 3D memory devices was a key innovation area identified from patents. ASM International's grant share as of January 2024 was 47%. Grant share is based on the ratio of number of grants to total number of patents.
Method of depositing transition metal nitride on substrate
A recently granted patent (Publication Number: US11885014B2) discloses a method for depositing a transition metal nitride-containing material on a substrate using a cyclic deposition process. The method involves providing a substrate in a reaction chamber, introducing an organometallic transition metal precursor, an auxiliary reactant (containing halogen), and a nitrogen precursor into the chamber in vapor phases to form the desired transition metal nitride on the substrate. The transition metal precursor specifically includes metals from groups 4 to 6 of the periodic table, with the auxiliary reactant containing halogens like bromine or iodine in various chemical forms such as 1,2-dihaloalkanes, dihaloalkenes, dihaloalkynes, or dihaloarenes.
Furthermore, the patent claims detail specific variations in the method, such as the use of group 6 transition metals like molybdenum or tungsten, with a specific mention of molybdenum in some instances. The composition of the transition metal precursor, nitrogen precursor, and the role of the auxiliary reactant in regulating the resistivity of the deposited material are also highlighted. Additionally, the patent includes a variation in the auxiliary reactant, specifying the use of 1,2-diiodoethane for the deposition process. Overall, the patent provides a detailed and specific method for depositing transition metal nitride-containing materials on substrates, offering potential applications in various industries requiring precise control over material properties.
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GlobalData Patent Analytics tracks bibliographic data, legal events data, point in time patent ownerships, and backward and forward citations from global patenting offices. Textual analysis and official patent classifications are used to group patents into key thematic areas and link them to specific companies across the world’s largest industries.
