Atomera has been granted a patent for a semiconductor device with a unique structure. The device includes single crystal silicon layers with varying percentages of silicon, separated by a superlattice containing non-semiconductor monolayers. The innovation aims to enhance semiconductor performance. GlobalData’s report on Atomera gives a 360-degree view of the company including its patenting strategy. Buy the report here.

According to GlobalData’s company profile on Atomera, Quantum dot devices was a key innovation area identified from patents. Atomera's grant share as of February 2024 was 52%. Grant share is based on the ratio of number of grants to total number of patents.

Semiconductor device with superlattice structure for improved performance

Source: United States Patent and Trademark Office (USPTO). Credit: Atomera Inc

A recently granted patent (Publication Number: US11923418B2) discloses a semiconductor device with unique features. The device includes a first single crystal silicon layer with a lower percentage of silicon, a second single crystal silicon layer with a higher percentage of silicon, and a superlattice structure between them. This superlattice consists of stacked groups of layers, with each group containing base silicon monolayers and at least one non-semiconductor monolayer constrained within the crystal lattice. The first percentage of silicon in the device is less than 93 percent, while the second percentage is greater than 95 percent, with the possibility of the second percentage exceeding 99 percent in some embodiments.

Furthermore, the semiconductor device may include additional single crystal silicon layers and superlattices, along with circuit devices associated with the second single crystal silicon layer. These circuit devices could include quantum bit devices and components like source and drain regions, a channel, gate dielectric layer, and gate electrode. The incorporation of oxygen monolayers within the crystal lattice of adjacent base silicon portions adds to the unique composition and functionality of the semiconductor device. Overall, the patent highlights a novel approach to semiconductor design, emphasizing the precise control of silicon percentages and the integration of superlattice structures to enhance device performance and functionality in various applications.

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GlobalData Patent Analytics tracks bibliographic data, legal events data, point in time patent ownerships, and backward and forward citations from global patenting offices. Textual analysis and official patent classifications are used to group patents into key thematic areas and link them to specific companies across the world’s largest industries.