Wolfspeed has filed a patent for a packaged electronic device that includes a power semiconductor die, a power substrate, and an encapsulation. The device also features first and second leads that are electrically connected to the first and second terminals of the power semiconductor die, respectively. The first terminal is bonded to the first lead using a first transient liquid phase solder joint. GlobalData’s report on Wolfspeed gives a 360-degree view of the company including its patenting strategy. Buy the report here.
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According to GlobalData’s company profile on Wolfspeed, quantum dot devices was a key innovation area identified from patents. Wolfspeed's grant share as of September 2023 was 64%. Grant share is based on the ratio of number of grants to total number of patents.
Packaged electronic device with power semiconductor die and solder joint
A recently filed patent (Publication Number: US20230317670A1) describes a packaged electronic device that includes a power semiconductor die, a power substrate, and a package. The power semiconductor die has a first terminal and a second terminal, and it may be a metal oxide semiconductor field effect transistor (MOSFET). The power substrate consists of a dielectric substrate with a first metal cladding layer on one surface. The package includes a first lead connected to the first terminal and a second lead connected to the second terminal. The first terminal is bonded to the first lead using a first transient liquid phase solder joint.
In some embodiments, the first terminal may be a first source/drain terminal, the first lead may be a first source/drain lead, the second terminal may be a gate terminal, and the second lead may be a gate lead. Alternatively, the first terminal may be a gate terminal, the first lead may be a gate lead, the second terminal may be a first source/drain terminal, and the second lead may be a first source/drain lead. The second terminal may also be bonded to the second lead using a second transient liquid phase solder joint.
The MOSFET may have a second source/drain terminal bonded to the first metal cladding layer using a third transient liquid phase solder joint. Additionally, there may be a second source/drain lead electrically connected to the first metal cladding layer via a fourth transient liquid phase solder joint.
The power semiconductor die may have a multilayer terminal with at least a first metal layer and a second metal layer, with the second metal layer including copper and/or nickel. There may also be a third metal layer including tin positioned outwardly of the second metal layer.
The power semiconductor die may be made of a semiconductor layer structure that includes silicon carbide. The power substrate may have a first copper cladding layer, and there may be a second copper cladding layer on the opposite surface of the dielectric substrate. Metal braze layers may be present between the dielectric substrate and the copper cladding layers.
The package may include an overmold encapsulation on at least three sides of the power semiconductor die and a portion of the power substrate. The first and second leads may extend outside the overmold encapsulation.
The patent also describes a method of packaging a power semiconductor die, which involves attaching the die to the power substrate, attaching a first lead to the first terminal using a first transient liquid phase solder joint, and electrically connecting a second lead to the second terminal.
Overall, this patent presents a packaged electronic device with specific configurations and bonding techniques for the power semiconductor die and leads. The use of transient liquid phase solder joints and multilayer terminals may provide improved performance and reliability.
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GlobalData Patent Analytics tracks bibliographic data, legal events data, point in time patent ownerships, and backward and forward citations from global patenting offices. Textual analysis and official patent classifications are used to group patents into key thematic areas and link them to specific companies across the world’s largest industries.
