Lam Research has patented a method for forming ferroelectric hafnium oxide (HfO2) in a substrate processing system. The process involves depositing layers of HfO2 and hafnium nitride (HfN) on a substrate, followed by annealing to create ferroelectric HfO2, crucial for FeRAM memory structures. GlobalData’s report on Lam Research gives a 360-degree view of the company including its patenting strategy. Buy the report here.
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According to GlobalData’s company profile on Lam Research, 3D memory devices was a key innovation area identified from patents. Lam Research's grant share as of February 2024 was 55%. Grant share is based on the ratio of number of grants to total number of patents.
Method of forming ferroelectric hafnium oxide for feram memory
A recently granted patent (Publication Number: US11923404B2) discloses a method for forming ferroelectric hafnium oxide (HfO2) in a ferroelectric random access memory (FeRAM) memory structure. The method involves depositing multiple layers of HfO2 and hafnium nitride (HfN) on a substrate, followed by the deposition of top and bottom electrodes. The layers are then annealed using a rapid thermal annealing process at a specific temperature range to form the desired ferroelectric hafnium HfO2. Additional steps such as oxidation of the HfN layer and nitridation of the HfO2 layer are also included in the method to enhance the properties of the memory structure.
Furthermore, the patent also describes a system configured to carry out the method of forming ferroelectric hafnium oxide on a substrate in a processing chamber. The system includes a gas delivery system, a radio frequency (RF) generating system to generate plasma, and a controller to control the deposition of layers and the annealing process. The controller is programmed to perform additional steps such as oxidation of the HfN layer and nitridation of the HfO2 layer, along with the deposition of top and bottom electrodes. The system aims to provide an efficient and controlled process for the formation of ferroelectric hafnium oxide in FeRAM memory structures, with the flexibility to dope the HfO2 layer with various dopant species for customized applications.
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