Macronix International has been granted a patent for a memory device and its operation method. The device includes an in-memory-searching (IMS) array, a working memory, and a buffer. The IMS array stores first strings representing a finite state machine (FSM), while the working memory stores second strings of the string pairs. The buffer stores a string representing the starting state of the FSM. The memory device is designed to efficiently program and store data for memory operations. GlobalData’s report on Macronix International gives a 360-degree view of the company including its patenting strategy. Buy the report here.
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According to GlobalData’s company profile on Macronix International, Magnetic RAMs was a key innovation area identified from patents. Macronix International's grant share as of September 2023 was 82%. Grant share is based on the ratio of number of grants to total number of patents.
Memory device with in-memory searching and finite state machine
A recently granted patent (Publication Number: US11776618B2) describes a memory device and an operation method for efficient searching and retrieval of data. The memory device includes a first driver circuit, a second driver circuit, an in-memory-searching (IMS) array, a sensing circuitry, a working memory, and a buffer. The IMS array consists of memory cells that store a plurality of first strings generated based on a finite state machine (FSM). These memory cells are connected to the first driver circuit via word lines and to the second driver circuit via third signal lines. The sensing circuitry, comprising sensing units, is coupled to the memory cells through second signal lines. The working memory has memory addresses corresponding to the sensing units and stores a plurality of second strings. The buffer stores a string representing the starting state of the FSM during initialization.
Each of the first strings in the memory cells is divided into a first portion codewords and a second portion codewords. The first portion codewords represent the current state, while the second portion codewords represent the current input. The second strings stored in the working memory represent the next state.
The operation method involves programming the first strings and second strings representing the FSM to the IMS array and working memory, respectively. Additionally, the string representing the starting state of the FSM is programmed to the buffer. The second strings in the working memory are outputted to the buffer based on the sensing result obtained by the sensing units, which detect a current greater than a predetermined threshold.
The method also includes applying first searching voltages representing the input of the FSM and second searching voltages based on the string stored in the buffer to the first signal lines of the memory device using the first driver circuit. This allows for efficient searching and retrieval of data.
Overall, this patent presents a memory device and operation method that enable efficient searching and retrieval of data based on a finite state machine. By dividing the strings into portions representing the current state and input, and utilizing the IMS array, sensing circuitry, working memory, and buffer, the memory device can perform these operations effectively. This technology has the potential to enhance memory systems and improve data processing capabilities.
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GlobalData Patent Analytics tracks bibliographic data, legal events data, point in time patent ownerships, and backward and forward citations from global patenting offices. Textual analysis and official patent classifications are used to group patents into key thematic areas and link them to specific companies across the world’s largest industries.
