Semiconductor Manufacturing International. has filed a patent for a semiconductor device with a substrate, metal layer, dielectric layer, contact hole exposing metal layer, conductive layer, thin film resistor layer, and cover layer. The design aims to improve performance and functionality in semiconductor devices. GlobalData’s report on Semiconductor Manufacturing International gives a 360-degree view of the company including its patenting strategy. Buy the report here.

According to GlobalData’s company profile on Semiconductor Manufacturing International, Quantum dot devices was a key innovation area identified from patents. Semiconductor Manufacturing International's grant share as of January 2024 was 69%. Grant share is based on the ratio of number of grants to total number of patents.

Semiconductor device with metal layer, dielectric layer, and resistor

Source: United States Patent and Trademark Office (USPTO). Credit: Semiconductor Manufacturing International Corp

A semiconductor device described in the patent application US20240030129A1 includes a substrate, a metal layer, a dielectric layer, a conductive layer, a thin film resistor layer, and a cover layer. The device also features contact holes exposing the metal layer, additional conductive layers, and a second metal layer. The substrate consists of a base substrate with a storage device and a logic device. The materials used in the device include aluminum, copper, nickel, silicon oxide, silicon nitride, silicon nitride boride, silicon oxycarbide, silicon oxynitride, CrSi, SiCCr, TaN, and NiCr. The method for forming the semiconductor device involves steps such as providing a substrate, forming layers, creating contact holes, and applying protective layers using specific materials and techniques like chemical vapor deposition and dry etching.

Furthermore, the method for forming the semiconductor device includes detailed processes for creating contact holes, forming layers, and applying protective coatings. The method involves specific flow rates, chamber pressures, and temperature ranges for gases used in chemical vapor deposition and dry etching processes. The substrate composition, including the storage and logic devices, is crucial in the formation of the semiconductor device. The method also includes steps for patterning the metal layer and discretely arranging it on the substrate. Overall, the patent application outlines a comprehensive approach to creating a semiconductor device with specific materials, layers, and techniques to ensure optimal performance and functionality.

To know more about GlobalData’s detailed insights on Semiconductor Manufacturing International, buy the report here.

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GlobalData Patent Analytics tracks bibliographic data, legal events data, point in time patent ownerships, and backward and forward citations from global patenting offices. Textual analysis and official patent classifications are used to group patents into key thematic areas and link them to specific companies across the world’s largest industries.