Sumco patented a method to evaluate cleanliness of silicon carbide surfaces. The process involves using a mixed acid, concentrating it, analyzing metal components, and determining the cleaning condition based on the results. This method ensures efficient cleaning of silicon carbide surfaces. GlobalData’s report on Sumco gives a 360-degree view of the company including its patenting strategy. Buy the report here.
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According to GlobalData’s company profile on Sumco, 3D memory devices was a key innovation area identified from patents. Sumco's grant share as of February 2024 was 64%. Grant share is based on the ratio of number of grants to total number of patents.
A recently granted patent (Publication Number: US11920257B2) discloses a method for determining the cleaning condition of a member with a silicon carbide surface. The method involves cleaning the surface under a candidate condition and then evaluating its cleanliness by bringing it into contact with a mixed acid solution of hydrofluoric acid, hydrochloric acid, and nitric acid. The mixed acid is concentrated by heating, and a sample solution is obtained for quantitative analysis of metal components using Inductively Coupled Plasma-Mass Spectrometry. Based on the quantitative result, the cleanliness level is assessed, and if it falls within an acceptable range, the candidate cleaning condition is deemed suitable for the silicon carbide surface.
Furthermore, the patent includes methods for manufacturing a silicon wafer using the determined cleaning condition for a member with a silicon carbide surface, such as a susceptor. The manufacturing process involves cleaning the member under the determined condition and then utilizing it in the production of the silicon wafer. The evaluation of cleanliness is crucial in ensuring the quality of the silicon wafer, and the method outlined in the patent provides a systematic approach for achieving this. The concentrations of the acids in the mixed solution and the specific solution added to the concentrated liquid are also detailed in the patent to ensure optimal cleaning results for the silicon carbide surface.
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