Taiwan Semiconductor Manufacturing has filed a patent for a memory device with a unique structure. It includes a substrate, signal lines, dielectric layers, phase change layer, and electrodes. The design aims to improve memory performance and efficiency. GlobalData’s report on Taiwan Semiconductor Manufacturing gives a 360-degree view of the company including its patenting strategy. Buy the report here.

According to GlobalData’s company profile on Taiwan Semiconductor Manufacturing, 3D memory devices was a key innovation area identified from patents. Taiwan Semiconductor Manufacturing's grant share as of January 2024 was 69%. Grant share is based on the ratio of number of grants to total number of patents.

Memory device with phase change layer between electrodes

Source: United States Patent and Trademark Office (USPTO). Credit: Taiwan Semiconductor Manufacturing Co Ltd

A memory device patent application (Publication Number: US20240040938A1) describes a memory device with a unique structure. The device includes a substrate, signal lines, dielectric layers, phase change layers, and electrodes arranged in a specific configuration. The electrodes penetrate through the layers, with the phase change layer located between them. The signal lines are electrically connected to the electrodes, providing a functional memory device design. Additionally, the fabrication method for this memory device involves forming signal lines, dielectric layers, and electrodes in a specific sequence, ensuring proper electrical connections and functionality. The method includes steps such as forming openings, depositing conductive material, and patterning the layers to create the desired structure.

Furthermore, the memory device patent application includes variations in the structure and fabrication method. Different configurations of the phase change layer, electrodes, and signal lines are described, offering flexibility in design. The method also involves specific processes such as etching and layer formation to achieve the desired structure. By detailing various configurations and fabrication steps, the patent application provides a comprehensive guide for creating memory devices with improved performance and functionality. Overall, the patent application presents a novel memory device design and fabrication method that could potentially enhance memory technology in the future.

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GlobalData, the leading provider of industry intelligence, provided the underlying data, research, and analysis used to produce this article.

GlobalData Patent Analytics tracks bibliographic data, legal events data, point in time patent ownerships, and backward and forward citations from global patenting offices. Textual analysis and official patent classifications are used to group patents into key thematic areas and link them to specific companies across the world’s largest industries.