ASM International has patented a method for depositing materials onto substrates within a reaction chamber. The system utilizes a temperature measurement device to control the exterior wall temperature, thereby reducing the need for cleaning or etching of the chamber’s interior surface during the deposition process. GlobalData’s report on ASM International gives a 360-degree view of the company including its patenting strategy. Buy the report here.
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According to GlobalData’s company profile on ASM International, 3D memory devices was a key innovation area identified from patents. ASM International's grant share as of June 2024 was 48%. Grant share is based on the ratio of number of grants to total number of patents.
Film deposition method with controlled reaction chamber temperature
The granted patent US12043899B2 outlines a method for depositing materials onto a substrate using a specialized deposition reactor. The reactor features a reaction chamber with a horizontal longitudinal axis extending from a gas distribution system to a vacuum source. Key components include an exterior wall surface, an interior wall surface, and a housing that encloses the exterior wall. The method involves providing a horizontal flow of gases into the reaction space, utilizing a precursor such as dichlorosilane for material deposition. A critical aspect of the process is the measurement and adjustment of the exterior wall surface temperature, which is monitored using a pyrometer. The temperature is controlled through a cooling medium connected to a chiller, and the region is heated to a range of 550° C. to 590° C. The method ensures that the temperature of the exterior wall surface is maintained for at least ten single substrate runs without requiring an intervening etch process.
Additionally, the patent details various adjustments that can be made to optimize the deposition process. These include controlling the flow rate of both the cooling medium and a convective medium, as well as adjusting blower speeds to manage temperature effectively. The wall of the reaction chamber can be made of quartz, with a thickness ranging from approximately 3 mm to 9 mm. The method also allows for the use of additional chlorosilanes as precursors and includes provisions for controlling the temperature of a susceptor within the chamber. Overall, the patent presents a comprehensive approach to material deposition that emphasizes temperature control and stability throughout the process.
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GlobalData Patent Analytics tracks bibliographic data, legal events data, point in time patent ownerships, and backward and forward citations from global patenting offices. Textual analysis and official patent classifications are used to group patents into key thematic areas and link them to specific companies across the world’s largest industries.
