Axcelis Technologies. has filed a patent for an ion implantation system that forms an aluminum ion beam using halide species and molecules to clean components and generate aluminum-halide vapor. The system includes an ion source, aluminum-containing species, halide source, and heat source. GlobalData’s report on Axcelis Technologies gives a 360-degree view of the company including its patenting strategy. Buy the report here.
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According to GlobalData’s company profile on Axcelis Technologies, 3D memory devices was a key innovation area identified from patents. Axcelis Technologies's grant share as of January 2024 was 53%. Grant share is based on the ratio of number of grants to total number of patents.
Ion implantation system for forming aluminum ion beam with halide cleaning
A recently filed patent (Publication Number: US20240035148A1) describes an ion implantation system designed for implanting aluminum ions. The system includes an ion source with an arc chamber and associated components, an aluminum-containing species, and a halide source providing halide species and molecules (excluding fluorine) to react with the aluminum-containing species, generating an aluminum-halide vapor. The halide species also serve to clean the arc chamber components, ensuring efficient operation. The system further comprises a heat source to facilitate the reaction process and cleaning of the components, enhancing the overall performance of the ion implantation system.
Additionally, the patent outlines a method for forming an aluminum ion beam using the described system. The method involves introducing halide species and molecules to the ion source, reacting them with the aluminum-containing species to produce an aluminum-halide vapor, and generating the aluminum ion beam. The halide species not only contribute to the formation of the ion beam but also play a crucial role in cleaning the ion source components. By incorporating these innovative features, the system and method aim to optimize the production of aluminum ion beams for various applications, highlighting the potential for advancements in the field of ion implantation technology.
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