Phison Electronics has been granted a patent for a signal calibration method for memory storage devices. This method involves generating and transmitting clock and data strobe signals to a target volatile memory module, measuring their shift value, and adjusting the data strobe signal’s delay based on this measurement. GlobalData’s report on Phison Electronics gives a 360-degree view of the company including its patenting strategy. Buy the report here.
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According to GlobalData’s company profile on Phison Electronics, Memory management was a key innovation area identified from patents. Phison Electronics's grant share as of June 2024 was 72%. Grant share is based on the ratio of number of grants to total number of patents.
Signal calibration method for memory storage devices
The granted patent US12008242B2 outlines a signal calibration method specifically designed for memory storage devices that utilize multiple volatile memory modules. The method involves generating a clock signal and a data strobe signal based on an internal clock signal, which are then transmitted to a target volatile memory module through distinct signal paths. A critical aspect of the method is the determination of a shift value between the clock and data strobe signals. If this shift exceeds a predefined threshold, the method allows for the storage of an initial delay setting for the data strobe signal, ensuring optimal synchronization and performance of the memory device.
Further claims detail the handling of multiple data strobe signals, where the method distinguishes between first and second data strobe signals based on their respective shift values. If the first shift value is within the threshold, its delay information may be discarded, while adjustments are made to the second data strobe signal if its shift value exceeds the threshold. The memory control circuit unit is responsible for generating and adjusting these signals, including the detection of boot signals to initiate the calibration process. Additionally, the method incorporates statistical computations to refine the shift value, enhancing the reliability and efficiency of the memory storage device's operation.
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