Power Integrations. has patented a GaN-based LED device that incorporates beryllium to achieve lower resistivity p-type materials compared to magnesium. This innovation enhances hole concentration, resulting in lower contact resistances and improved electron confinement, leading to higher efficiency and brighter LEDs with greater current handling capability. GlobalData’s report on Power Integrations gives a 360-degree view of the company including its patenting strategy. Buy the report here.
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According to GlobalData’s company profile on Power Integrations, Quantum dot devices was a key innovation area identified from patents. Power Integrations's grant share as of June 2024 was 70%. Grant share is based on the ratio of number of grants to total number of patents.
Gan-based led with improved p-type material using beryllium
The granted patent US12046699B2 presents a novel structure for a Gallium Nitride (GaN)-based light-emitting diode (LED) device. The device comprises a growth substrate, which can be selected from various materials including sapphire, silicon carbide (SiC), GaN, aluminum nitride (AlN), or silicon. Over this substrate, a series of layers are formed: a GaN buffer layer with n-type doping, an n-type AlGaN confinement layer, and an InGaN/GaN multi-quantum well (MQW) active region. Additionally, the structure includes a magnesium-doped AlGaN layer that serves as an electron confinement layer, and a GaN layer that functions as both a current spreading and an ohmic contact layer. Notably, the GaN layer incorporates beryllium impurities introduced through ion implantation, which are activated via a high-temperature annealing process in a hydrogen and ammonia-free environment, resulting in a low resistivity p-type layer.
The patent also outlines a method for fabricating this LED structure, which mirrors the structural claims. The method involves the sequential formation of the aforementioned layers on the selected growth substrate, ensuring that the electron confinement layer can be one of several magnesium-doped configurations. The process emphasizes the importance of the ion implantation and annealing steps to achieve the desired electrical properties in the GaN layer. Furthermore, the MQW active region can be substituted with either doped or undoped GaN or AlGaN, and the current spreading layer is described as optional. This patent thus provides a comprehensive framework for developing advanced GaN-based LED devices with enhanced performance characteristics.
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GlobalData Patent Analytics tracks bibliographic data, legal events data, point in time patent ownerships, and backward and forward citations from global patenting offices. Textual analysis and official patent classifications are used to group patents into key thematic areas and link them to specific companies across the world’s largest industries.
