Aixtron has patented a method for depositing a nucleation layer on a group IV substrate using group III and V elements. By introducing specific gaseous materials at high temperatures, they achieve a low dopant concentration for reduced damping in III-V crystals. GlobalData’s report on Aixtron gives a 360-degree view of the company including its patenting strategy. Buy the report here.
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According to GlobalData’s company profile on Aixtron, 3D memory devices was a key innovation area identified from patents. Aixtron's grant share as of February 2024 was 41%. Grant share is based on the ratio of number of grants to total number of patents.
Method for depositing nucleation layer on substrate with doping effect
A recently granted patent (Publication Number: US11887848B2) discloses a method for depositing a nucleation layer on a substrate made of a group IV element. The method involves introducing gaseous starting materials containing group III and V elements into a process chamber at temperatures above 500°C. A third gaseous starting material containing a group IV element is also fed into the chamber at the beginning of the deposition process. By controlling the partial pressure and mass flow of the third material, a specific dopant concentration is achieved, resulting in a decrease in high-frequency damping. The nucleation layer is then followed by the deposition of a buffer layer and an active layer, leading to the development of a two-dimensional electron gas at the boundary surface between the two layers.
Furthermore, the patent details various aspects of the method, including the process temperature range, molar ratios of starting materials, and specific elements used. The substrate is typically silicon or germanium, with the third gaseous starting material containing silicon or germanium compounds. The group III element is often aluminum, while the group V element is nitrogen. The resulting layer sequence includes a doped nucleation layer, a buffer layer, and an active layer, with the two-dimensional electron gas forming at the interface between the buffer and active layers. Overall, the method aims to optimize the deposition process to achieve specific dopant concentrations and reduce high-frequency damping, leading to the creation of advanced semiconductor structures with improved electronic properties.
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GlobalData Patent Analytics tracks bibliographic data, legal events data, point in time patent ownerships, and backward and forward citations from global patenting offices. Textual analysis and official patent classifications are used to group patents into key thematic areas and link them to specific companies across the world’s largest industries.
