ASM International has been granted a patent for methods to form patterned structures suitable for multiple patterning processes. The method involves layering a substrate using specific precursor and reactant pulse periods, along with applying plasma power at distinct frequencies, enhancing the precision of pattern formation. GlobalData’s report on ASM International gives a 360-degree view of the company including its patenting strategy. Buy the report here.
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According to GlobalData’s company profile on ASM International, 3D memory devices was a key innovation area identified from patents. ASM International's grant share as of July 2024 was 47%. Grant share is based on the ratio of number of grants to total number of patents.
Method for forming patterned structures using multiple patterning
The patent US12074022B2 outlines a method for creating patterned structures through a multiple patterning process. This method involves several key steps, starting with the provision of a substrate that has a surface with existing patterned features. A layer is then formed over this substrate by introducing a precursor and a reactant into a reaction chamber. The process includes applying a first plasma power at a frequency below 1 MHz, with the option to apply a second plasma power at a higher frequency. The claims detail specific frequency ranges for both plasma powers, the potential overlap of power application periods, and the cyclical nature of the deposition process. Additionally, the method specifies the use of inert gases, such as argon or helium, in conjunction with the reactant, emphasizing a particular gas-to-reactant ratio.
Further claims elaborate on the manipulation of mechanical properties of the formed layer, including adjustments to the inert gas and reactant flow ratios, as well as the power of the plasma. The method allows for precise control over the deposition parameters, such as the duration and power levels of the plasma, and the pressure within the reaction chamber. The resulting device structure, as described in the patent, consists of multiple layers, including a first layer, a second layer to be etched, and patterned features on the second layer, culminating in a layer that is either an oxide or a nitride with a specified film stress. This innovative approach aims to enhance the fabrication of advanced materials and structures in semiconductor applications.
To know more about GlobalData’s detailed insights on ASM International, buy the report here.
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GlobalData Patent Analytics tracks bibliographic data, legal events data, point in time patent ownerships, and backward and forward citations from global patenting offices. Textual analysis and official patent classifications are used to group patents into key thematic areas and link them to specific companies across the world’s largest industries.
