Alpha and Omega Semiconductor has been granted a patent for a power MOSFET drain-source on resistance (Rdson) compensation device. This device utilizes circuitry to process input signals related to voltage drop, temperature, and gate-source voltage, producing a compensated voltage through a linear discrete voltage divider. GlobalData’s report on Alpha and Omega Semiconductor gives a 360-degree view of the company including its patenting strategy. Buy the report here.
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According to GlobalData’s company profile on Alpha and Omega Semiconductor, Under-screen biometric identification was a key innovation area identified from patents. Alpha and Omega Semiconductor's grant share as of July 2024 was 87%. Grant share is based on the ratio of number of grants to total number of patents.
Power mosfet drain-source on resistance compensation device
The granted patent US12055565B2 introduces a power MOSFET drain-source on-resistance (Rdson) compensation device designed to enhance the performance of power MOSFETs by compensating for variations in resistance due to temperature and gate-source voltage changes. The device comprises circuitry that receives an input signal reflecting the voltage drop across the MOSFET, along with temperature-dependent and gate-source voltage-dependent information. This circuitry includes control logic and a first linear discrete voltage divider, which generates a compensated voltage based on compensating control signals derived from the temperature and gate-source voltage signals. The control logic is capable of providing both first and second order temperature coefficient compensation terms, as well as higher-order terms, ensuring precise adjustments to the compensated voltage.
Additionally, the device features a second linear discrete voltage divider that outputs a gate-source voltage compensated voltage, utilizing outputs from voltage coefficient control logic. The arrangement of output switches within the voltage dividers allows for unique path resistances to be established based on the specific values of the temperature and gate-source voltage dependent information. This configuration includes multiple cascaded stages of output switches, each corresponding to different orders of temperature and gate-source voltage coefficients. The control logic is designed to activate only one switch in each stage for a given input, thereby optimizing the compensation process. Overall, this patent presents a sophisticated approach to managing the Rdson of power MOSFETs, potentially leading to improved efficiency and reliability in electronic applications.
To know more about GlobalData’s detailed insights on Alpha and Omega Semiconductor, buy the report here.
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