Diodes has patented a method for manufacturing a semiconductor Schottky rectifier device. The process involves etching trenches in a semiconductor substrate, forming dielectric and polysilicon layers, and creating metal silicide contacts, ultimately resulting in distinct anode and cathode electrodes. GlobalData’s report on Diodes gives a 360-degree view of the company including its patenting strategy. Buy the report here.
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According to GlobalData’s company profile on Diodes, Authentication communication protocols was a key innovation area identified from patents. Diodes's grant share as of July 2024 was 68%. Grant share is based on the ratio of number of grants to total number of patents.
Method for forming a semiconductor schottky rectifier device
The patent US12051728B2 outlines a method for fabricating a semiconductor Schottky rectifier device, emphasizing a structured approach to etching and layering materials. The process begins with a semiconductor substrate topped with an epitaxial material layer. A hard mask is created to define openings for guard rings, anode, and cathode regions. The method involves etching trenches in the epitaxial layer, followed by the deposition of a dielectric layer and a polysilicon layer. An anisotropic etch forms polysilicon elements along the trench sidewalls, leading to the deposition of a second dielectric layer. This layer is then etched to expose specific regions for the Schottky diode and cathode. A thermal treatment is applied after depositing a first metal layer to create metal silicide contacts, which are crucial for the device's functionality. The process concludes with the formation of an anode and cathode electrode from a second metal layer.
Additionally, the patent describes variations in the trench structures, including the formation of a third trench within the cathode region and the potential for step features in the trench designs. The methods also allow for the creation of plated NiAu bumps for the electrodes and emphasize the importance of aligning the trench structures with the polysilicon elements. The use of titanium as a metal layer and the formation of titanium silicide layers are specified, enhancing the electrical properties of the device. Overall, the claims detail a comprehensive method for producing a Schottky rectifier with improved structural and electrical characteristics, highlighting the intricate layering and etching techniques involved in semiconductor fabrication.
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GlobalData Patent Analytics tracks bibliographic data, legal events data, point in time patent ownerships, and backward and forward citations from global patenting offices. Textual analysis and official patent classifications are used to group patents into key thematic areas and link them to specific companies across the world’s largest industries.
