Diodes has been granted a patent for a semiconductor Schottky rectifier with an innovative cathode structure. The device features a trench structure with a polysilicon element and metal silicide film, enhancing performance and efficiency. GlobalData’s report on Diodes gives a 360-degree view of the company including its patenting strategy. Buy the report here.
According to GlobalData’s company profile on Diodes, Authentication communication protocols was a key innovation area identified from patents. Diodes's grant share as of April 2024 was 69%. Grant share is based on the ratio of number of grants to total number of patents.
Schottky rectifier with trench structure and polysilicon element

A recently granted patent (Publication Number: US11916117B2) discloses a semiconductor Schottky device featuring a semiconductor substrate with an epitaxial layer, an anode contact structure, and a cathode contact structure extending from the top surface of the epitaxial layer. The cathode contact structure includes a trench structure with a polysilicon element and a first metal silicide film connected to the cathode contact structure. Additionally, a Schottky contact is present between a second silicide layer and the semiconductor epitaxial layer, connected to the anode contact structure. The device also includes a step feature and a dielectric film covering the polysilicon element, enhancing its functionality.
Furthermore, the patent details various configurations and materials used in the semiconductor Schottky device, such as titanium silicide for the first metal silicide film and the second silicide layer. The presence of a dielectric film comprising oxide and NiAu bumps coupled to the anode and cathode contact structures further highlights the innovative design of the device. These features aim to improve the performance and efficiency of the semiconductor device, showcasing advancements in semiconductor technology.
To know more about GlobalData’s detailed insights on Diodes, buy the report here.
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