Micron Technology had 16 patents in big data during Q2 2024. Micron Technology Inc’s patents filed in Q2 2024 focus on methods of forming microelectronic devices with advanced structures, such as cell pillar structures and digit line structures. Additionally, the patents describe systems for media fragmentation management in memory sub-system controllers, as well as microelectronic devices with unique stack structures and dielectric slot structures. Furthermore, the patents also cover the use of deep learning devices in vehicles for managing system information and generating analytics. Overall, the patents highlight innovations in microelectronic device design, memory management, and vehicle technology. GlobalData’s report on Micron Technology gives a 360-degree view of the company including its patenting strategy. Buy the report here.
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Micron Technology had no grants in big data as a theme in Q2 2024.
Recent Patents
Application: Memory devices and related methods of forming a memory device (Patent ID: US20240213150A1)
The patent filed by Micron Technology Inc. describes a method for forming a microelectronic device structure assembly, including a memory device with a control circuitry structure and a memory array structure. The memory array structure consists of digit line structures, a stack structure, a source structure with doped semiconductor material, and pillar structures. The method involves bonding the memory array structure to the control circuitry structure, removing portions of the base structure, and patterning the doped semiconductor material to form source structures. The memory device also includes metallic strapping material, dielectric materials, and conductive structures to enhance performance and functionality.
Furthermore, the patent details the formation process of the memory device, including steps such as epitaxial growth of silicon, doping, formation of pillar structures with various materials, and the use of metallic strapping material. The method involves precise patterning and bonding techniques to create a reliable and efficient memory device. Additionally, the patent discusses the integration of control logic devices, capacitors, and global routing structures within the memory device assembly to optimize performance and functionality. Overall, the patent outlines a comprehensive method for manufacturing a 3D NAND Flash memory device with advanced features and capabilities.
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