OmniVision Technologies has been granted a patent for methods of forming transistors in image sensors. The process involves creating a recess in the substrate material, forming a trench structure, and incorporating a gate portion and gate into the isolation layer. This innovation aims to enhance the performance of image sensors. GlobalData’s report on OmniVision Technologies gives a 360-degree view of the company including its patenting strategy. Buy the report here.
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According to GlobalData’s company profile on OmniVision Technologies, was a key innovation area identified from patents. OmniVision Technologies's grant share as of February 2024 was 72%. Grant share is based on the ratio of number of grants to total number of patents.
Method of manufacturing transistor for image sensor
A recently granted patent (Publication Number: US11901383B2) discloses a method for manufacturing a transistor of an image sensor. The method involves forming a recess in a substrate material corresponding to a gate region and enlarging it using an isotropic process to create a trench structure with a polygonal cross-section. A photodiode is formed adjacent to the trench structure, followed by the creation of an isolation layer and a gate portion that extends into the trench structure. A gate is then formed on the isolation layer, extending into the trench structure.
The method includes various additional steps such as using an anisotropic process for forming the recess, controlling etching rates in different directions during the isotropic process, and fabricating multiple transistors simultaneously. The unique design of the trench structure with at least four sidewall portions allows for an effective channel width greater than the planar channel width of the transistor. The polygonal cross-section of the trench structure, including a diamond shape, and the specific angles formed by the sidewall portions contribute to the improved performance of the transistor. Additionally, the method involves forming an isolation implant between the trench structure and the photodiode to enhance the functionality of the image sensor transistor.
To know more about GlobalData’s detailed insights on OmniVision Technologies, buy the report here.
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GlobalData Patent Analytics tracks bibliographic data, legal events data, point in time patent ownerships, and backward and forward citations from global patenting offices. Textual analysis and official patent classifications are used to group patents into key thematic areas and link them to specific companies across the world’s largest industries.
