Taiwan Semiconductor Manufacturing has been granted a patent for a semiconductor device featuring multiple deep trench capacitors and via contacts. The design allows for variations in the number and placement of via contacts to meet specific packaging requirements, enhancing manufacturing flexibility. GlobalData’s report on Taiwan Semiconductor Manufacturing gives a 360-degree view of the company including its patenting strategy. Buy the report here.

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According to GlobalData’s company profile on Taiwan Semiconductor Manufacturing, 3D memory devices was a key innovation area identified from patents. Taiwan Semiconductor Manufacturing's grant share as of July 2024 was 70%. Grant share is based on the ratio of number of grants to total number of patents.

Semiconductor device with deep trench capacitors and via contacts

Source: United States Patent and Trademark Office (USPTO). Credit: Taiwan Semiconductor Manufacturing Co Ltd

The patent US12074227B2 describes a semiconductor device and package that incorporates a sophisticated arrangement of conductive and dielectric layers to enhance electrical performance. The device features a semiconductor substrate with a grid of trenches oriented in two perpendicular directions. Over these trenches, a first conductive layer is placed, followed by a first dielectric layer and a second conductive layer. The design includes multiple inner conductive structures positioned adjacent to the trenches, with some inner structures located between the trenches, and outer conductive structures situated further away. This configuration aims to optimize electrical connectivity and reduce interference within the semiconductor device.

Additionally, the patent outlines specific arrangements of conductive structures, including subsets connected to different voltage levels, which contribute to the device's functionality. The inner conductive structures are strategically placed to surround the trenches, while the outer structures are designed to enhance the overall electrical architecture. The semiconductor package described in the patent includes a silicon interposer that supports multiple semiconductor dies, ensuring efficient electrical connections. The inclusion of multiple dielectric and conductive layers further enhances the device's performance, making it suitable for advanced semiconductor applications.

To know more about GlobalData’s detailed insights on Taiwan Semiconductor Manufacturing, buy the report here.

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GlobalData, the leading provider of industry intelligence, provided the underlying data, research, and analysis used to produce this article.

GlobalData Patent Analytics tracks bibliographic data, legal events data, point in time patent ownerships, and backward and forward citations from global patenting offices. Textual analysis and official patent classifications are used to group patents into key thematic areas and link them to specific companies across the world’s largest industries.