Will Semiconductor has been granted a patent for a method of manufacturing transistors for image sensors. The process involves forming a recess in the substrate material, creating a trench structure, and incorporating a photodiode. The innovative technique aims to enhance the performance of image sensor transistors. GlobalData’s report on Will Semiconductor gives a 360-degree view of the company including its patenting strategy. Buy the report here.
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According to GlobalData’s company profile on Will Semiconductor, Under-screen biometric identification was a key innovation area identified from patents. Will Semiconductor's grant share as of February 2024 was 74%. Grant share is based on the ratio of number of grants to total number of patents.
Method of manufacturing transistor for image sensor with trench structure
A recently granted patent (Publication Number: US11901383B2) discloses a method for manufacturing a transistor for an image sensor. The method involves forming a recess in a substrate material, enlarging the recess to create a trench structure using an isotropic process, and forming a photodiode adjacent to the trench structure. An isolation layer and gate portion are then formed on the substrate material, with the gate extending into the trench structure. Additional steps include forming a spacer around the gate and a dielectric layer on the gate. The method also allows for the fabrication of a second transistor by repeating the process with a second recess and trench structure.
The patent details various aspects of the manufacturing process, including the use of anisotropic and isotropic processes for creating the recess and trench structure, respectively. The dimensions and shapes of the trench structure, including a polygonal cross-section with multiple sidewall portions, are crucial for achieving an effective channel width greater than the planar channel width of the transistor. The method also involves forming isolation implants in the substrate material to enhance the performance of the image sensor. Overall, the patented method offers a novel approach to manufacturing transistors for image sensors, with a focus on optimizing the design and structure to improve functionality and efficiency.
To know more about GlobalData’s detailed insights on Will Semiconductor, buy the report here.
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GlobalData Patent Analytics tracks bibliographic data, legal events data, point in time patent ownerships, and backward and forward citations from global patenting offices. Textual analysis and official patent classifications are used to group patents into key thematic areas and link them to specific companies across the world’s largest industries.
