Will Semiconductor has patented a SiGe photodiode for crosstalk reduction in image sensors. The technology involves using a combination of silicon and silicon germanium materials in pixels to improve light sensitivity. The patent aims to enhance image quality by reducing interference between adjacent pixels. GlobalData’s report on Will Semiconductor gives a 360-degree view of the company including its patenting strategy. Buy the report here.
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According to GlobalData’s company profile on Will Semiconductor, Under-screen biometric identification was a key innovation area identified from patents. Will Semiconductor's grant share as of January 2024 was 72%. Grant share is based on the ratio of number of grants to total number of patents.
Sige photodiode for crosstalk reduction in image sensors
A recently granted patent (Publication Number: US11876110B2) discloses an innovative image sensor design comprising a pixel array with multiple photodiodes, each pixel including a first photodiode made of silicon (Si) and a second photodiode made of a combination of Si and silicon germanium (SiGe) materials. The concentration of germanium (Ge) in the SiGe material varies vertically within the material, increasing from zero at the non-illuminated surface to a maximum at a certain depth and then decreasing back to zero. This unique configuration enhances the light sensitivity of the second photodiodes compared to the first ones, improving overall image quality.
Furthermore, the patent details the arrangement of deep trench isolation (DTI) structures to separate the Si and SiGe materials within the pixels, ensuring efficient performance. The concentration of Ge within the SiGe material changes gradually through the depth, with a maximum value falling within the range of 0.3-0.7. The design also includes additional features such as isolation wells and trenches to optimize the full well capacity of the photodiodes and enhance the overall functionality of the image sensor. By strategically positioning the SiGe material in a trench within the semiconductor material, the sensor achieves improved light sensitivity and image capture capabilities, making it a promising development in the field of image sensor technology.
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GlobalData Patent Analytics tracks bibliographic data, legal events data, point in time patent ownerships, and backward and forward citations from global patenting offices. Textual analysis and official patent classifications are used to group patents into key thematic areas and link them to specific companies across the world’s largest industries.
