Diodes has been granted a patent for a semiconductor Schottky rectifier design featuring an anode and cathode structure on an epitaxial layer over a substrate. The cathode structure includes a trench structure with a polysilicon element and a metal silicide film, enhancing device performance. GlobalData’s report on Diodes gives a 360-degree view of the company including its patenting strategy. Buy the report here.
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According to GlobalData’s company profile on Diodes, Authentication communication protocols was a key innovation area identified from patents. Diodes's grant share as of February 2024 was 69%. Grant share is based on the ratio of number of grants to total number of patents.
Schottky rectifier with trench structure and polysilicon element
The granted patent (Publication Number: US11916117B2) discloses a semiconductor Schottky device comprising a semiconductor substrate, a semiconductor epitaxial layer, an anode contact structure, and a cathode contact structure. The cathode contact structure includes a trench structure with a polysilicon element and a first metal silicide film connected to the cathode contact structure. A Schottky contact is also present between a second silicide layer and the semiconductor epitaxial layer, connected to the anode contact structure. Additionally, a step feature is included between the top surface of the semiconductor epitaxial layer and the bottom of the trench structure, with the polysilicon element positioned in an upper part of the step feature.
Furthermore, the semiconductor Schottky device includes various configurations such as the presence of a dielectric film covering the side of the polysilicon element, the use of titanium silicide in the first metal silicide film, and the separation of the second silicide layer from the first metal silicide film. The dielectric film is specified to comprise oxide, and the device also includes NiAu bumps coupled to both the anode and cathode contact structures. These features contribute to the functionality and performance of the semiconductor Schottky device, enhancing its capabilities in various applications within the semiconductor industry.
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