Entegris. has been granted a patent for a method to create silicon oxycarbonitride films (SiOCN) with adjustable carbon content (5-60%) using a disilane precursor and co-reactants like oxygen, ammonia, and nitrous oxide. The resulting films can be converted to silicon dioxide via O2 plasma treatment. GlobalData’s report on Entegris gives a 360-degree view of the company including its patenting strategy. Buy the report here.
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According to GlobalData’s company profile on Entegris, 3D memory devices was a key innovation area identified from patents. Entegris's grant share as of June 2024 was 52%. Grant share is based on the ratio of number of grants to total number of patents.
Method for forming silicon oxycarbonitride films on substrates
The granted patent US12037681B2 outlines a method for forming a silicon oxycarbonitride film on a microelectronic device substrate. This process involves exposing the substrate to a silicon precursor compound defined by a specific formula, with options for substituents X and Y, which can include halogen, methyl, or propyl groups. The method also incorporates co-reactants such as nitrous oxide, oxygen, and ammonia, either individually or in combination, to facilitate the formation of the silicon oxycarbonitride film. Additional claims detail variations in the precursor's composition, including conditions where X differs from Y and where specific substituents are employed.
Furthermore, the patent describes a method for converting the silicon oxycarbonitride film into a silicon oxide film. This involves using the silicon oxycarbonitride film as an etch stop and applying an oxygen plasma for conversion. The process may also include acid etching with hydrofluoric or phosphoric acid, resulting in a silicon oxide film that is over 99 atomic percent silicon and oxygen. Additionally, the patent claims a method for producing various coatings using a shared precursor, specifically targeting silicon oxycarbonitride films with less than 20 atomic percent carbon and greater than 50 atomic percent carbon, which can also be treated with acid etching.
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