Entegris has developed a patent for an improved method of nucleating metal nitride on microelectronic device substrates. By utilizing specific compounds and gases in a pretreatment process, the methodology results in enhanced nucleation, leading to a thin film with minimal void area. This allows for rapid layer deposition. GlobalData’s report on Entegris gives a 360-degree view of the company including its patenting strategy. Buy the report here.

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According to GlobalData’s company profile on Entegris, 3D memory devices was a key innovation area identified from patents. Entegris's grant share as of April 2024 was 52%. Grant share is based on the ratio of number of grants to total number of patents.

Pretreatment process for metal nitride nucleation on microelectronic substrates

Source: United States Patent and Trademark Office (USPTO). Credit: Entegris Inc

A recently granted patent (Publication Number: US11965239B2) discloses a pretreatment process for metal nitride nucleation on the surface of a microelectronic device substrate in a reaction zone. The process involves introducing specific compounds into the reaction zone under pulsed vapor deposition conditions, including silicon-containing halides, metal precursors (such as titanium), and nitrogen-containing reducing gases. The compounds are introduced in a defined sequence and order, followed by purging with an inert gas to establish a cycle of pulse sequences. This process is repeated multiple times to achieve the desired metal nitride nucleation on the substrate.

Furthermore, the patent details a process for metal nitride nucleation that includes a second cycle of pulse sequences involving additional compounds D and E, representing metal precursors and nitrogen-containing reducing gases. The repetition of this second cycle ensures the establishment of metal nitride nucleation on the substrate with a specific coverage percentage. The patent also specifies a range of metal precursors and metal nitrides that can be utilized in the process, along with a selection of nitrogen-containing reducing gases. Overall, the patent outlines a comprehensive method for effectively pretreating microelectronic device substrates to facilitate metal nitride nucleation, offering potential advancements in the field of microelectronics manufacturing.

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GlobalData Patent Analytics tracks bibliographic data, legal events data, point in time patent ownerships, and backward and forward citations from global patenting offices. Textual analysis and official patent classifications are used to group patents into key thematic areas and link them to specific companies across the world’s largest industries.