Fujitsu. has filed a patent for a manufacturing method of a compound semiconductor device with a semiconductor laminate structure, source electrode, gate electrode, and drain electrode. The method includes forming a first insulating film with a slit to compensate for input signal distortion using an amplifier with a compensating circuit. GlobalData’s report on Fujitsu gives a 360-degree view of the company including its patenting strategy. Buy the report here.
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According to GlobalData’s company profile on Fujitsu, M2M communication interfaces was a key innovation area identified from patents. Fujitsu's grant share as of January 2024 was 27%. Grant share is based on the ratio of number of grants to total number of patents.
Manufacturing method for compound semiconductor device with insulating film slit
The patent application (Publication Number: US20240039486A1) discloses a manufacturing method for a compound semiconductor device and an amplifier comprising the same. The manufacturing method involves forming a semiconductor laminate structure with specific layers, including an electron transit layer and an electron supply layer made from compound semiconductor. Additionally, the method includes the formation of source, gate, and drain electrodes in a particular arrangement above the semiconductor laminate structure. A crucial aspect of the method is the creation of a first insulating film with a defined slit in the first direction and a specific internal stress between the gate and drain electrodes.
The amplifier described in the patent application features a compensating circuit designed to address distortion in an input signal. The amplifier includes a compound semiconductor device with a semiconductor laminate structure comprising an electron transit layer and an electron supply layer from compound semiconductor materials. Furthermore, the device incorporates source, gate, and drain electrodes arranged in a specific direction above the semiconductor laminate structure. A key component of the amplifier is the first insulating film with a defined slit in the first direction and a particular internal stress, situated between the gate and drain electrodes. Overall, the patent application outlines a unique manufacturing method for compound semiconductor devices and an amplifier incorporating innovative design elements to enhance performance and functionality.
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