Infineon Technologies has filed a patent for a method of manufacturing a semiconductor device. The method involves forming semiconductor device elements in a semiconductor body, creating a wiring area over the surface of the body, attaching the body to a carrier, implanting ions into the body through the second surface, irradiating the surface region with laser pulses, and finally removing the carrier. GlobalData’s report on Infineon Technologies gives a 360-degree view of the company including its patenting strategy. Buy the report here.
Smarter leaders trust GlobalData
According to GlobalData’s company profile on Infineon Technologies, Under-screen biometric identification was a key innovation area identified from patents. Infineon Technologies's grant share as of September 2023 was 65%. Grant share is based on the ratio of number of grants to total number of patents.
Method of manufacturing a semiconductor device with attached carrier
A recently filed patent (Publication Number: US20230317456A1) describes a method of manufacturing a semiconductor device in a semiconductor body. The method involves forming semiconductor device elements in the semiconductor body by processing the first surface of the body. A wiring area is then formed over the first surface, and the semiconductor body is attached to a carrier via the wiring area.
In addition to the initial steps, the method may also include reducing the thickness of the semiconductor body after attaching it to the carrier and before implanting ions through the second surface. A metal contact can be formed on the second surface of the semiconductor body after irradiating the surface region with laser pulses. The ions used in the process can include protons, as well as other elements such as selenium, sulfur, phosphorus, boron, arsenic, aluminum, gallium, indium, platinum, palladium, and gold.
The carrier used in the method can be made of organic, inorganic, or hybrid material and can be attached to the semiconductor body via the wiring area using electrostatic force, adhesive force, or magnetic force. The carrier can be removed from the semiconductor body through various methods, including chemical soaking, chemical dissolving, temperature, electromagnetic radiation, mechanical, magnetic, or electric forces.
The patent also describes the formation of a metal contact on the second surface either before or after removing the carrier from the semiconductor body. The method involves applying a series of laser pulses to the semiconductor body, ensuring that thermal equilibrium is not reached during pulse off-mode. The laser pulses can vary in pulse duration, pulse energy density, and pulse repetition rate.
The semiconductor device resulting from this method includes a semiconductor body with semiconductor device elements and a wiring area on the first surface. The body also contains an impurity with a concentration profile that has a penetration depth from the second surface. The concentration profile includes a concentration plateau along a vertical segment, ranging from 30% to 70% of the penetration depth, with a fluctuation of less than 20%.
The impurity in the semiconductor device can be hydrogen-related donors, selenium, sulfur, phosphorus, boron, aluminum, gallium, indium, platinum, palladium, or gold. The penetration depth of the impurity ranges from 500 nm to 5 µm. The quotient of a net doping concentration and a minority carrier lifetime increases with increasing vertical distance to the second surface, both within the concentration plateau and in greater depth.
Overall, this patent describes a method and resulting semiconductor device that involve various steps and parameters to manufacture a semiconductor device with specific impurity concentration profiles and characteristics.
To know more about GlobalData’s detailed insights on Infineon Technologies, buy the report here.
Data Insights
From
The gold standard of business intelligence.
Blending expert knowledge with cutting-edge technology, GlobalData’s unrivalled proprietary data will enable you to decode what’s happening in your market. You can make better informed decisions and gain a future-proof advantage over your competitors.
GlobalData, the leading provider of industry intelligence, provided the underlying data, research, and analysis used to produce this article.
GlobalData Patent Analytics tracks bibliographic data, legal events data, point in time patent ownerships, and backward and forward citations from global patenting offices. Textual analysis and official patent classifications are used to group patents into key thematic areas and link them to specific companies across the world’s largest industries.
