Infineon Technologies had six patents in advanced materials during Q1 2024.The patent filed by Infineon Technologies AG in Q1 2024 describes a piezoresistive transistor device with stacked transistor cells containing piezoelectric and piezoresistive material bodies. The electrical resistance of the piezoresistive material bodies is dependent on the voltage applied across the piezoelectric material bodies through pressure. An internal electrical interconnect connects the electrical resistances of the transistor cells in series or parallel. GlobalData’s report on Infineon Technologies gives a 360-degree view of the company including its patenting strategy. Buy the report here.
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Infineon Technologies grant share with advanced materials as a theme is 66% in Q1 2024. Grant share is based on the ratio of number of grants to total number of patents.
Recent Patents
Application: Piezoresistive transistor device and power electronic module including a piezoresistive transistor device (Patent ID: US20240090355A1)
The patent filed by Infineon Technologies AG describes a piezoresistive transistor device that includes multiple transistor cells with piezoelectric and piezoresistive material bodies arranged in a stacked configuration. The electrical resistance of the piezoresistive material bodies is dependent on the voltage applied across the piezoelectric material bodies due to pressure. The device can connect these electrical resistances in series or parallel using internal electrical interconnects. Additionally, the patent details various configurations and orientations of the transistor cells within a housing structure, as well as the connection of control terminals and load terminals.
The claims of the patent further elaborate on the structure and functionality of the piezoresistive transistor device, including the arrangement of multiple transistor cells, common piezoelectric material bodies, control terminals, load terminals, and internal electrical interconnects. The patent also discusses the orientation of the piezoresistive material bodies in different spatial planes, as well as the configuration of the device for specific applications such as power electronics modules. Overall, the patent outlines a novel design for a piezoresistive transistor device that offers flexibility in connecting multiple transistor cells and optimizing their performance based on the applied pressure and voltage.
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GlobalData Patent Analytics tracks bibliographic data, legal events data, point in time patent ownerships, and backward and forward citations from global patenting offices. Textual analysis and official patent classifications are used to group patents into key thematic areas and link them to specific companies across the world’s largest industries.
