Microsoft had 12 patents in advanced materials during Q1 2024. Microsoft Corp has developed methods for creating semiconductor-superconductor hybrid devices with horizontally-confined channels. This involves forming isolated semiconductor heterostructures, adding left and right gates on opposite sides, and then applying a superconducting layer. GlobalData’s report on Microsoft gives a 360-degree view of the company including its patenting strategy. Buy the report here.
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Microsoft grant share with advanced materials as a theme is 58% in Q1 2024. Grant share is based on the ratio of number of grants to total number of patents.
Recent Patents
Application: Forming semiconductor-superconductor hybrid devices with a horizontally-confined channel (Patent ID: US20240065113A1)
The patent filed by Microsoft describes methods for forming semiconductor-superconductor hybrid devices with a horizontally-confined channel. The process involves creating isolated semiconductor heterostructures, adding left and right gates to control the electrostatic channel, and applying a superconducting layer over the structures. The gates allow for tuning the electrostatic channel, and the offset between the gates and the semiconductor heterostructures reduces structural disorder at the interface with the superconducting layer.
The method includes specific steps such as etching a semiconductor heterostructure wafer, removing capping layers, and forming dielectric and metal layers for the gates. The semiconductor heterostructures can consist of various layers like indium arsenide, gallium arsenide, or mercury telluride. The superconducting layer can be made of lead, indium, tin, or aluminum, and the substrate can be materials like indium phosphide or indium arsenide. The patent also details the formation of terminals for applying voltages to the gates, ensuring precise control over the electrostatic channel within the semiconductor-superconductor hybrid device.
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