Semiconductor Manufacturing International has filed a patent for a semiconductor structure and method for forming it. The structure includes a substrate, a dielectric layer, a trench, a conductive layer, and a second dielectric layer. The invention aims to increase the conductive sectional area of the resistor structure while reducing the transverse area, allowing for device miniaturization. GlobalData’s report on Semiconductor Manufacturing International gives a 360-degree view of the company including its patenting strategy. Buy the report here.
Smarter leaders trust GlobalData
Access deeper industry intelligence
Experience unmatched clarity with a single platform that combines unique data, AI, and human expertise.
According to GlobalData’s company profile on Semiconductor Manufacturing International, quantum dot devices was a key innovation area identified from patents. Semiconductor Manufacturing International's grant share as of September 2023 was 69%. Grant share is based on the ratio of number of grants to total number of patents.
Miniaturized semiconductor structure with increased conductive sectional area
A recently filed patent (Publication Number: US20230299075A1) describes a semiconductor structure and a method for forming it. The structure includes a substrate, a first dielectric layer on the substrate, a trench in the first dielectric layer, a conductive layer on the bottom and sidewall of the trench, and a second dielectric layer filled in the trench. The conductive layer is configured as a resistor structure. The substrate has a device region for forming a transistor and a resistor region for forming the resistor structure. The structure also includes a channel structure, an isolation layer, and an interlayer dielectric layer. The trench extends through the interlayer dielectric layer of the resistor region. The method for forming the semiconductor structure involves providing a substrate with a first dielectric layer, forming a trench in the first dielectric layer, forming a conductive layer on the bottom and sidewall of the trench, and filling the trench with a second dielectric layer.
The semiconductor structure described in the patent utilizes a unique configuration of layers and materials to create a resistor structure. The structure includes a conductive layer that acts as the resistor and is located in a trench within the dielectric layers. This configuration allows for precise control and optimization of the resistor's properties. The structure also includes various other components such as a channel structure, isolation layer, and interlayer dielectric layer, which are important for the overall functionality of the semiconductor device.
The method for forming the semiconductor structure involves a series of steps, including the formation of the substrate, dielectric layers, trench, and conductive layer. The method also includes the use of a planarization process, such as chemical-mechanical planarization, to remove excess conductive and dielectric material and create a smooth surface. Additionally, the method may involve the use of atomic layer deposition for forming the conductive layer.
Overall, this patent presents a novel semiconductor structure and method for its formation. The structure's unique configuration and the method's specific steps offer potential advantages in terms of performance, efficiency, and manufacturing processes. However, further research and development are needed to validate and implement this technology in practical applications.
To know more about GlobalData’s detailed insights on Semiconductor Manufacturing International, buy the report here.
Data Insights
From
The gold standard of business intelligence.
Blending expert knowledge with cutting-edge technology, GlobalData’s unrivalled proprietary data will enable you to decode what’s happening in your market. You can make better informed decisions and gain a future-proof advantage over your competitors.
GlobalData, the leading provider of industry intelligence, provided the underlying data, research, and analysis used to produce this article.
GlobalData Patent Analytics tracks bibliographic data, legal events data, point in time patent ownerships, and backward and forward citations from global patenting offices. Textual analysis and official patent classifications are used to group patents into key thematic areas and link them to specific companies across the world’s largest industries.
