Semiconductor Manufacturing International has been granted a patent for a semiconductor structure featuring magnetic tunnel junctions on a substrate. Each junction comprises distinct first and second regions with multilayered materials, enhancing storage capacity density through specific doping and material variations in the electromagnetic layers. GlobalData’s report on Semiconductor Manufacturing International gives a 360-degree view of the company including its patenting strategy. Buy the report here.
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According to GlobalData’s company profile on Semiconductor Manufacturing International, Quantum dot devices was a key innovation area identified from patents. Semiconductor Manufacturing International's grant share as of July 2024 was 72%. Grant share is based on the ratio of number of grants to total number of patents.
High-density semiconductor structure with magnetic tunnel junctions
The granted patent US12075705B2 describes a semiconductor structure featuring magnetic tunnel junctions (MTJs) that are built on a substrate. Each MTJ consists of two coplanar regions: a first region and a second region, which are characterized by distinct material properties. The structure includes a multilayered material comprising a first electromagnetic layer, an insulating layer, and a second electromagnetic layer. Notably, the first region is composed of cobalt iron boron without doping ions, while the second region incorporates cobalt iron boron doped with various modifying ions, such as titanium or tantalum. The patent also details additional layers, including a seed layer, an optimized layer, and electrode layers, which are integral to the MTJ's functionality.
The claims further elaborate on the differences in physical and chemical properties between the layers in the first and second regions, including variations in thickness and roughness. The patent outlines methods for forming these semiconductor structures, emphasizing the importance of patterning processes and modification treatments to achieve the desired material characteristics. These processes may involve etching and doping techniques to ensure that the layers in each region meet specific performance criteria. The invention aims to enhance the performance of semiconductor devices by optimizing the properties of the magnetic tunnel junctions, potentially leading to advancements in data storage and processing technologies.
To know more about GlobalData’s detailed insights on Semiconductor Manufacturing International, buy the report here.
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GlobalData Patent Analytics tracks bibliographic data, legal events data, point in time patent ownerships, and backward and forward citations from global patenting offices. Textual analysis and official patent classifications are used to group patents into key thematic areas and link them to specific companies across the world’s largest industries.
