United Microelectronics has been granted a patent for a semiconductor device featuring a single diffusion break (SDB) structure that separates a fin-shaped structure into two portions. The device includes isolation structures and shallow trench isolation (STI), with coplanar top surfaces for the SDB and STI. GlobalData’s report on United Microelectronics gives a 360-degree view of the company including its patenting strategy. Buy the report here.
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According to GlobalData’s company profile on United Microelectronics, Quantum dot devices was a key innovation area identified from patents. United Microelectronics's grant share as of July 2024 was 79%. Grant share is based on the ratio of number of grants to total number of patents.
Semiconductor device with single diffusion break structure
The granted patent US12074070B2 outlines a semiconductor device featuring a unique architecture designed to enhance performance and integration. Central to this design is a single diffusion break (SDB) structure that divides a fin-shaped structure into two distinct portions. The device includes a first isolation structure positioned on the SDB, alongside a shallow trench isolation (STI) that is adjacent to the SDB. Notably, the top surfaces of both the STI and the SDB are coplanar, which is a critical aspect of the device's structural integrity. Additionally, a second isolation structure is placed on the STI, ensuring effective isolation between the device components.
Further details of the semiconductor device reveal that the first isolation structure consists of a cap layer atop the SDB, complemented by a dielectric layer. The dielectric layer can take on a T-shape, and there are variations where both the cap layer and the dielectric layer together form a T-shape or where the cap layer is designed in a U-shape. The claims also specify that the cap layer and dielectric layer may be composed of different materials, providing flexibility in material selection. Importantly, the design ensures that the bottom surfaces of both the first and second isolation structures are coplanar, contributing to the overall stability and performance of the semiconductor device.
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GlobalData Patent Analytics tracks bibliographic data, legal events data, point in time patent ownerships, and backward and forward citations from global patenting offices. Textual analysis and official patent classifications are used to group patents into key thematic areas and link them to specific companies across the world’s largest industries.
