Vishay Intertechnology has developed a power semiconductor device integrating multiple quasi-vertical transistors on a single chip. By paralleling power transistors with varying threshold voltages, the device reduces voltage drop when forward-biased. Additionally, a lower threshold voltage transistor acts as a depletion diode to shunt body diodes without affecting performance. GlobalData’s report on Vishay Intertechnology gives a 360-degree view of the company including its patenting strategy. Buy the report here.
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According to GlobalData’s company profile on Vishay Intertechnology, 3D memory devices was a key innovation area identified from patents. Vishay Intertechnology's grant share as of January 2024 was 56%. Grant share is based on the ratio of number of grants to total number of patents.
Power semiconductor device integrating multiple quasi-vertical transistors on single chip
A recently granted patent (Publication Number: US11888047B2) discloses a power semiconductor device featuring a unique design with two groups of laterally-gated transistors integrated on a single semiconductor die. Each transistor in the device includes a source region, gate electrode, and vertically-extended conduction region connecting the drain region to a drain extension region. The threshold voltages of the transistors in the first group are lower than those in the second group, with the widths of the first group narrower than the second. Additionally, the device incorporates fixed electrostatic charges in the walls of a trenched field plate to provide the vertically-extended conduction region for the second group of transistors.
Furthermore, the patented device includes a first and second laterally-gated transistor with distinct features such as a common drain electrode, vertically-extended source extension region, and shorting strap connecting the source region. The gate electrodes of both transistors are part of a single thin film layer, with the first transistor having a lower threshold voltage and smaller width compared to the second transistor. The lateral channel of the first transistor is also shorter than that of the second, with impurities implanted to decrease its threshold voltage. The device showcases innovative design elements like a shielding shape between gate electrodes and a common source electrode on the backside of the device, enhancing its power semiconductor capabilities.
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GlobalData Patent Analytics tracks bibliographic data, legal events data, point in time patent ownerships, and backward and forward citations from global patenting offices. Textual analysis and official patent classifications are used to group patents into key thematic areas and link them to specific companies across the world’s largest industries.
