Vishay Intertechnology. has been granted a patent for a vertical trench MOSFET design featuring deep P-shield regions that prevent unwanted N-channel formation. This innovation enhances electric field management and eliminates the need for field plate trenches, improving device performance and reliability. GlobalData’s report on Vishay Intertechnology gives a 360-degree view of the company including its patenting strategy. Buy the report here.
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According to GlobalData’s company profile on Vishay Intertechnology, 3D memory devices was a key innovation area identified from patents. Vishay Intertechnology's grant share as of July 2024 was 60%. Grant share is based on the ratio of number of grants to total number of patents.
Vertical trench mosfet with p-shield regions for improved performance
The patent US12057482B2 describes a trenched power device that integrates a semiconductor substrate with a multi-layered structure designed to enhance electrical performance. The device features a drift region of a first conductivity type, a well region of a second conductivity type, and a source region of the first conductivity type. A key aspect of the design is the inclusion of a first trench, which is divided into two portions: the first trench portion creates a conductive channel when a gate voltage exceeds a threshold, while the second trench portion is insulated to prevent channel formation. Additionally, a shield region of the second conductivity type is positioned below the second trench portion, ensuring that no conductive channel is established between the source and drift regions when the device is in an off state. This configuration aims to improve the device's efficiency and reliability.
Further claims in the patent detail enhancements to the basic design, such as the introduction of multiple trenches that are parallel and identical, which can be electrically connected to form a more robust structure. The shield regions can be more highly doped than the well region, contributing to better performance. The patent also outlines a method for manufacturing the trenched power device, which includes etching trenches, implanting dopants to form shield regions, and insulating the trench sidewalls. The method emphasizes the importance of aligning trench gate portions across multiple trenches to maintain consistent electrical characteristics. Overall, the patent presents a comprehensive approach to developing a trenched power device with improved operational capabilities and manufacturing techniques.
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GlobalData Patent Analytics tracks bibliographic data, legal events data, point in time patent ownerships, and backward and forward citations from global patenting offices. Textual analysis and official patent classifications are used to group patents into key thematic areas and link them to specific companies across the world’s largest industries.
