Himax Technologies has been granted a patent for a static random-access memory (SRAM) cell design that includes inverters, access transistors, passage transistors, and a capacitor switch. The design allows for efficient data storage and retrieval in electronic devices. GlobalData’s report on Himax Technologies gives a 360-degree view of the company including its patenting strategy. Buy the report here.

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According to GlobalData’s company profile on Himax Technologies, Adaptive video coding was a key innovation area identified from patents. Himax Technologies's grant share as of May 2024 was 71%. Grant share is based on the ratio of number of grants to total number of patents.

Static random-access memory (sram) cell with improved stability

Source: United States Patent and Trademark Office (USPTO). Credit: Himax Technologies Inc

A recently granted patent (Publication Number: US11990178B2) discloses a static random-access memory (SRAM) cell design featuring a unique configuration. The SRAM cell includes two inverters cross-coupled between ground and power, each connected to a bit line via access transistors controlled by a word line. Additionally, the cell incorporates passage transistors for common-mode voltage and input signal control, a capacitor switchably coupled to receive these signals, and a switch controlled by a sample clock signal to connect the capacitor to the passage transistors' outputs. This design allows for efficient data storage and retrieval within the SRAM cell.

Furthermore, the patent details a sampling and quantization phase within the SRAM cell operation. During the sampling phase, the switch is closed, enabling the capacitor to sample a voltage while connected to the common-mode voltage. In contrast, the quantization phase sees the switch open, allowing the capacitor's bottom plate to connect to a reference voltage via an inverted switch controlled by an inverted sample clock signal. This process results in the sampled voltage being transferred to the capacitor's top plate. The innovative design and operational phases outlined in the patent aim to enhance the performance and efficiency of SRAM cells for various applications in the field of memory technology.

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GlobalData Patent Analytics tracks bibliographic data, legal events data, point in time patent ownerships, and backward and forward citations from global patenting offices. Textual analysis and official patent classifications are used to group patents into key thematic areas and link them to specific companies across the world’s largest industries.