Taiwan Semiconductor Manufacturing has been granted a patent for a semiconductor structure and method for its formation. The structure includes a gate structure, dielectric material, source/drain contact layer, and trench conductor layer. The method involves forming S/D region, dielectric layer, depositing metallic material, and forming a second metallic layer. GlobalData’s report on Taiwan Semiconductor Manufacturing gives a 360-degree view of the company including its patenting strategy. Buy the report here.
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According to GlobalData’s company profile on Taiwan Semiconductor Manufacturing, 3D memory devices was a key innovation area identified from patents. Taiwan Semiconductor Manufacturing's grant share as of May 2024 was 61%. Grant share is based on the ratio of number of grants to total number of patents.
Semiconductor structure with improved source/drain contact formation
A recently granted patent (Publication Number: US12002867B2) discloses a method for forming a semiconductor structure involving various steps. The method includes forming a source/drain (S/D) region over a substrate, followed by the formation of a layer of dielectric material over the S/D region. A recess structure is then created in the dielectric layer to expose the S/D region, after which a first layer of metallic material is deposited in the recess structure at different rates on the sidewall of the dielectric material. This is followed by the formation of a second layer of metallic material over and in contact with the first layer of metallic material.
Furthermore, the patent describes additional steps such as forming a silicide layer between the metallic material and the S/D region, as well as the formation of a gate structure adjacent to the S/D region. The method also involves the deposition of additional layers of metallic material and dielectric material, along with planarizing the surfaces before the final layer of metallic material is formed. The patent emphasizes the use of specific materials and deposition rates to achieve the desired semiconductor structure, showcasing innovation in the field of semiconductor manufacturing processes.
To know more about GlobalData’s detailed insights on Taiwan Semiconductor Manufacturing, buy the report here.
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GlobalData Patent Analytics tracks bibliographic data, legal events data, point in time patent ownerships, and backward and forward citations from global patenting offices. Textual analysis and official patent classifications are used to group patents into key thematic areas and link them to specific companies across the world’s largest industries.
