Everspin Technologies has been granted a patent for a method of manufacturing a magnetoresistive structure. The method involves etching through a second magnetic region, depositing an encapsulation layer, etching re-deposited material, and etching the intermediate layer. This process allows for the creation of a magnetoresistive stack with improved performance. GlobalData’s report on Everspin Technologies gives a 360-degree view of the company including its patenting strategy. Buy the report here.
Smarter leaders trust GlobalData
Access deeper industry intelligence
Experience unmatched clarity with a single platform that combines unique data, AI, and human expertise.
According to GlobalData’s company profile on Everspin Technologies, In-memory computing was a key innovation area identified from patents. Everspin Technologies's grant share as of September 2023 was 67%. Grant share is based on the ratio of number of grants to total number of patents.
Method of manufacturing a magnetoresistive structure with encapsulation layers
A recently granted patent (Publication Number: US11778919B2) describes a method for manufacturing a magnetoresistive structure with an intermediate layer between two magnetic regions. The method involves several steps to achieve the desired structure.
The first claim outlines the method, which includes etching through the second magnetic region to expose surfaces that may contain re-deposited material. A first encapsulation layer is then deposited on these exposed surfaces, followed by etching of the re-deposited material. Finally, the intermediate layer is etched.
Claim 2 specifies that one or more of the steps (a, b, or d) can involve an ion beam etch, while claim 3 adds that a physical etch can also be used in one or more of these steps.
Claim 4 introduces the addition of a second encapsulation layer, which can be deposited either before or after etching the intermediate layer. Furthermore, claim 6 states that the second encapsulation layer can have larger dimensions than the first encapsulation layer.
The composition of the encapsulation layers is addressed in claim 7, which states that they can be made of silicon oxide, silicon nitride, or tetraethylorthosilicate (TEOS), and that the first and second encapsulation layers can have different compositions.
The subsequent claims (8-20) describe an alternative method for manufacturing the magnetoresistive structure. This method follows a similar sequence of steps as outlined in the first claim, but with some variations in the order of deposition and etching processes.
Overall, this patent provides a detailed description of methods for manufacturing a magnetoresistive structure with an intermediate layer. The inclusion of encapsulation layers and the use of different etching techniques are key features of the described methods. These techniques may have potential applications in the field of magnetoresistive devices and could contribute to advancements in magnetic storage and sensing technologies.
To know more about GlobalData’s detailed insights on Everspin Technologies, buy the report here.
Data Insights
From
The gold standard of business intelligence.
Blending expert knowledge with cutting-edge technology, GlobalData’s unrivalled proprietary data will enable you to decode what’s happening in your market. You can make better informed decisions and gain a future-proof advantage over your competitors.
GlobalData, the leading provider of industry intelligence, provided the underlying data, research, and analysis used to produce this article.
GlobalData Patent Analytics tracks bibliographic data, legal events data, point in time patent ownerships, and backward and forward citations from global patenting offices. Textual analysis and official patent classifications are used to group patents into key thematic areas and link them to specific companies across the world’s largest industries.
