Lumentum. has been granted a patent for an optical semiconductor device featuring a substrate, a semiconductor multilayer with an optical functional layer, and an insulating film. The design includes a thinner insulating film region overlapping with an electrode, ensuring electrical connectivity while covering the multilayer. GlobalData’s report on Lumentum gives a 360-degree view of the company including its patenting strategy. Buy the report here.
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According to GlobalData’s company profile on Lumentum, was a key innovation area identified from patents. Lumentum's grant share as of June 2024 was 76%. Grant share is based on the ratio of number of grants to total number of patents.
Optical semiconductor device with specialized insulating film structure
The patent US12046870B2 describes an innovative optical semiconductor device that comprises a substrate, a semiconductor multilayer featuring an optical functional layer, an insulating film, and an electrode. The design ensures that the insulating film covers the semiconductor multilayer, except for the area where the semiconductor multilayer and the electrode connect electrically. Notably, a portion of the insulating film that overlaps with the electrode is thinner than the surrounding regions, allowing for enhanced electrical connectivity while maintaining structural integrity. The claims also detail variations in the insulating film's composition, including the possibility of using different materials for distinct layers, such as silicon nitride, aluminum oxide, and silicon oxide.
Additionally, the patent outlines a method for fabricating the optical semiconductor device, which involves forming the semiconductor multilayer on a substrate, applying the insulating film, and placing the electrode on the insulating film. The method emphasizes the importance of the insulating film's thickness variation, particularly in areas overlapping with the electrode, to optimize performance. The claims further explore configurations of the insulating layers, including arrangements where one layer is positioned above or below another, and the inclusion of a stripe structure within the semiconductor multilayer. This comprehensive approach aims to enhance the functionality and efficiency of optical semiconductor devices, potentially leading to advancements in various applications within the field.
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