MACOM Technology Solutions has been granted a patent for Schottky diodes capable of withstanding reverse-bias voltages exceeding 2000 V with minimal reverse current leakage. The diodes feature a unique design with specific semiconductor materials and electrode configurations. GlobalData’s report on MACOM Technology Solutions gives a 360-degree view of the company including its patenting strategy. Buy the report here.
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According to GlobalData’s company profile on MACOM Technology Solutions, Quantum dot devices was a key innovation area identified from patents. MACOM Technology Solutions's grant share as of February 2024 was 79%. Grant share is based on the ratio of number of grants to total number of patents.
High-voltage schottky diode with low reverse current leakage
A recently granted patent (Publication Number: US11923462B2) discloses a Schottky diode design featuring a conduction layer, first and second semiconductor material layers, cathodes, and an anode. The conduction layer includes gallium-nitride material, with an oxide layer between the anode and the second layer. Additional features include an anode-connected field plate, a buffer layer on a substrate, and electrical isolation regions in the conduction layer. The anode composition can vary, and the first layer comprises aluminum gallium nitride while the second layer comprises gallium-nitride material. The diode design also allows for multiple cathodes and anodes, with corresponding conductive leads and bond pads for electrical connections.
Moreover, the patent also outlines a method for forming the Schottky diode, involving the sequential formation of the conduction layer, semiconductor material layers, cathodes, and anode. The method includes the creation of an oxide layer between the anode and the second layer, with specific steps for forming the oxide layer such as opening a via and subjecting the region to an oxygen plasma. The method also covers the formation of anode-connected field plates extending beyond the anode's edges. The process details pressure and time parameters for the oxygen plasma treatment, ensuring the proper formation of the oxide layer. Overall, the patented design and method offer a novel approach to Schottky diode construction, incorporating various materials and structures to enhance performance and functionality in electronic applications.
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