Shenzhen Goodix Technology has filed a patent for binnable time-of-flight (ToF) pixels that can be integrated with image sensor pixels. The pixels include a central dump gate and sub-pixels that are mirror-symmetric and identical around the dump gate. In an un-binned mode, each sub-pixel can integrate photocharge in its storage region until readout, while in a binned mode, sub-pixels can integrate photocharge directly in their floating diffusion (FD) regions, allowing for charge binning. The patent also describes the structure and arrangement of the pixels within an array. GlobalData’s report on Shenzhen Goodix Technology gives a 360-degree view of the company including its patenting strategy. Buy the report here.
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According to GlobalData’s company profile on Shenzhen Goodix Technology, AI-assisted biometric recognition was a key innovation area identified from patents. Shenzhen Goodix Technology's grant share as of September 2023 was 47%. Grant share is based on the ratio of number of grants to total number of patents.
Binnable time-of-flight (tof) pixel for image sensor integration
A recently filed patent (Publication Number: US20230319432A1) describes a binnable time-of-flight (ToF) pixel and a ToF imaging sensor. The pixel includes a dump gate, first and second sub-pixels, and readout circuitry. The first sub-pixel consists of a photodiode (PD) region, a storage region, and a floating diffusion (FD) region, while the second sub-pixel has similar components. The pixel is formed within an oxide diffusion region on a semiconductor substrate. The readout circuitry is formed on a separate oxide diffusion region.
The patent also describes a method for ToF imaging sensing using the binnable ToF pixel. The method involves integrating photocharge in the first sub-pixel during the first frames of an integration time window and integrating photocharge in the second sub-pixel during the second frames. In a binned mode, the photocharge is shuttled from the PD region to the FD region by actuating both the storage gate and the transfer gate of each sub-pixel. In an un-binned mode, the photocharge is shuttled to the storage region instead. The method further includes generating output values for each sub-pixel and creating a depth map based on the differences between these values.
The ToF imaging sensor described in the patent consists of an array of binnable ToF pixels and an array controller. The array controller modulates the integration of photocharge at the sub-pixels synchronously with the modulation of illumination to obtain ToF-based depth information. In a binned mode, the array controller actuates the storage and transfer gates of the first sub-pixel in the first frames and the storage and transfer gates of the second sub-pixel in the second frames. In an un-binned mode, the array controller only actuates the storage gates. The sensor can also operate in a binning mode, where the accumulated photocharge is read out from shared FD regions to generate binned output values and a depth map.
Overall, this patent describes a binnable ToF pixel and a ToF imaging sensor that can capture depth information based on the round-trip time of illumination. The pixel and sensor configurations allow for both binned and un-binned modes of operation, providing flexibility in capturing and processing ToF data.
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GlobalData Patent Analytics tracks bibliographic data, legal events data, point in time patent ownerships, and backward and forward citations from global patenting offices. Textual analysis and official patent classifications are used to group patents into key thematic areas and link them to specific companies across the world’s largest industries.
