United Microelectronics has patented a method to reduce power consumption in devices using existing bulk CMOS process flows. The Deeply Depleted Channel (DDC) design allows for precise threshold voltage control, reducing power consumption. The patent includes a field effect transistor with specific configurations for improved efficiency. GlobalData’s report on United Microelectronics gives a 360-degree view of the company including its patenting strategy. Buy the report here.

According to GlobalData’s company profile on United Microelectronics, Quantum dot devices was a key innovation area identified from patents. United Microelectronics's grant share as of January 2024 was 81%. Grant share is based on the ratio of number of grants to total number of patents.

Field effect transistor with reduced power consumption

Source: United States Patent and Trademark Office (USPTO). Credit: United Microelectronics Corp

A recently granted patent (Publication Number: US11887895B2) discloses a novel field-effect transistor (FET) design that includes a screening region, a substantially undoped semiconductive layer, and a threshold voltage setting region. The FET is formed in a doped well and features a gate stack positioned above the well to control conduction between the source and drain, with a substantially undoped channel region maintained between the gate stack and the threshold voltage setting region. The screening region, doped with a first type of dopant, plays a crucial role in setting the depth of a depletion layer below the gate stack, while the threshold voltage setting region modifies the FET's threshold voltage. The patent details various bias modes under which the FET can be operated, each with specific voltage conditions between the doped well, source, and drain.

Furthermore, the patent describes additional embodiments of the FET design, including variations in the configuration of the screening region, undoped channel, and dopant concentrations. The screening region can extend between the drain and source or be separated from them, while the undoped channel may have a constant dopant concentration in a depth direction. Additionally, the screening region and threshold voltage tuning region can be doped with the same dopant, and the depletion layer is prevented from passing through the screening region under specific voltage conditions. These innovative features aim to enhance the performance and efficiency of the FET in various operational modes, making it a promising development in semiconductor technology.

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GlobalData Patent Analytics tracks bibliographic data, legal events data, point in time patent ownerships, and backward and forward citations from global patenting offices. Textual analysis and official patent classifications are used to group patents into key thematic areas and link them to specific companies across the world’s largest industries.