Global Foundries. has been granted a patent for a semiconductor structure featuring a bipolar transistor design. This includes an emitter, collector, and a base contact region within a semiconductor substrate, along with a shallow trench isolation structure that separates these components. GlobalData’s report on Global Foundries gives a 360-degree view of the company including its patenting strategy. Buy the report here.
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According to GlobalData’s company profile on Global Foundries, Quantum dot devices was a key innovation area identified from patents. Global Foundries's grant share as of July 2024 was 79%. Grant share is based on the ratio of number of grants to total number of patents.
Bipolar transistors with shallow trench isolation structures
The granted patent US12074211B2 outlines a semiconductor structure designed to enhance the functionality and isolation of electronic components within a semiconductor substrate. The primary components of the structure include an emitter, a collector, and a base contact region, all situated within the substrate. Notably, the base contact region is positioned adjacent to both the emitter and collector, with a shallow trench isolation structure that overlaps the base contact region, effectively separating it from the other two components. The claims detail various configurations of the base contact region, including its extension to the upper surface of the substrate and its positioning relative to the shallow trench isolation structure, which can be deeper than the emitter and collector.
Additionally, the patent describes the electrical characteristics of the components, specifying that the emitter and collector are N+ regions while the base contact region is a P+ region. The structure may also include a deep N-well beneath the base contact region, enhancing isolation. Furthermore, the claims mention the presence of a floating gate structure, which can be a replacement metal gate, positioned between the emitter and collector. This floating gate structure, along with additional gate structures on the shallow trench isolation, contributes to the overall functionality of the semiconductor device. The patent also outlines a method for forming this structure, emphasizing the sequential creation of the emitter, collector, base contact region, and shallow trench isolation to achieve the desired electronic properties and isolation.
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GlobalData Patent Analytics tracks bibliographic data, legal events data, point in time patent ownerships, and backward and forward citations from global patenting offices. Textual analysis and official patent classifications are used to group patents into key thematic areas and link them to specific companies across the world’s largest industries.
