Global Foundries has been granted a patent for a lateral bipolar transistor structure with inner and outer spacers, enhancing performance. The structure includes specific layers and dopant concentrations for improved functionality. GlobalData’s report on Global Foundries gives a 360-degree view of the company including its patenting strategy. Buy the report here.
Smarter leaders trust GlobalData
Access deeper industry intelligence
Experience unmatched clarity with a single platform that combines unique data, AI, and human expertise.
According to GlobalData’s company profile on Global Foundries, Quantum dot devices was a key innovation area identified from patents. Global Foundries's grant share as of January 2024 was 82%. Grant share is based on the ratio of number of grants to total number of patents.
Lateral bipolar transistor structure with inner and outer spacers
A lateral bipolar transistor structure has been granted a patent (Publication Number: US11888050B2) with a unique design featuring an emitter/collector (E/C) layer over an insulator, a first base layer with a concave sidewall, and a second base layer with a higher dopant concentration. The structure also includes inner and outer spacers, with the inner spacer having a vertically tapered sidewall and the outer spacer having a non-tapered sidewall. The second base layer is T-shaped, and the E/C layer is divided into lower and upper portions adjacent to the first base layer and outer spacer, respectively.
The patent also covers a method for forming the bipolar transistor structure, involving the sequential formation of the E/C layer, first base layer, second base layer, inner spacer, and outer spacer. The method includes specific steps such as creating a concave sidewall for the first base layer, adjusting dopant concentrations, and forming the spacers with precise dimensions. The inner spacer is designed with a uniform horizontal width and consists of an oxide insulator, while the outer spacer is made of a nitride insulator. This method aims to optimize the performance and efficiency of the lateral bipolar transistor structure by carefully controlling the design and fabrication process to achieve desired electrical characteristics.
To know more about GlobalData’s detailed insights on Global Foundries, buy the report here.
Data Insights
From
The gold standard of business intelligence.
Blending expert knowledge with cutting-edge technology, GlobalData’s unrivalled proprietary data will enable you to decode what’s happening in your market. You can make better informed decisions and gain a future-proof advantage over your competitors.
GlobalData, the leading provider of industry intelligence, provided the underlying data, research, and analysis used to produce this article.
GlobalData Patent Analytics tracks bibliographic data, legal events data, point in time patent ownerships, and backward and forward citations from global patenting offices. Textual analysis and official patent classifications are used to group patents into key thematic areas and link them to specific companies across the world’s largest industries.
