ROHM has been granted a patent for a semiconductor device featuring an IGBT region with an FET structure, a diode region, and a boundary region. The design includes a trench to define regions and a main surface electrode connecting various components, enhancing the device’s functionality. GlobalData’s report on ROHM gives a 360-degree view of the company including its patenting strategy. Buy the report here.
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According to GlobalData’s company profile on ROHM, Under-screen biometric identification was a key innovation area identified from patents. ROHM's grant share as of July 2024 was 49%. Grant share is based on the ratio of number of grants to total number of patents.
Semiconductor device with igbt and diode regions
The patent US12074161B2 describes a semiconductor device that integrates an Insulated Gate Bipolar Transistor (IGBT) region, a diode region, and a boundary region within a semiconductor layer. The device features a first main surface and a second main surface, with the IGBT region comprising a field-effect transistor (FET) structure, a collector region, a body region, an emitter region, and a gate electrode. The diode region is defined by impurity regions on both main surfaces, while a trench separates the diode region from the boundary region. The design ensures that the boundaries between these regions are strategically aligned, enhancing the device's performance and efficiency.
Additionally, the patent outlines various configurations and features of the semiconductor device, including the presence of multiple well regions, boundary FET structures, and floating regions within the IGBT region. These elements are designed to optimize the electrical characteristics of the device, such as improving isolation and reducing interference between components. The claims also specify the relationships between the different regions, including their spatial arrangements and electrical connections, which contribute to the overall functionality of the semiconductor device. This innovative design aims to enhance the operational capabilities of semiconductor devices in various applications.
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GlobalData Patent Analytics tracks bibliographic data, legal events data, point in time patent ownerships, and backward and forward citations from global patenting offices. Textual analysis and official patent classifications are used to group patents into key thematic areas and link them to specific companies across the world’s largest industries.
